SCHEMBL98742

SCHEMBL98742

CCC(CC)C(=O)[O-].CCC(CC)C(=O)[O-].[Cu+2]

nearest known ligand 0.58

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
CA2 P00918 4/20 0.58
TSHR P16473 3/20 0.57
CYP3A4 P08684 2/20 0.57
NFKB1 P19838 2/20 0.57
NPSR1 Q6W5P4 2/20 0.57
USP2 O75604 1/20 0.42
MAPK1 P28482 1/20 0.39
CA1 P00915 3/20 0.37
SLC1A3 P43003 1/20 0.37
SLC1A2 P43004 1/20 0.37
SLC1A1 P43005 1/20 0.37
FFAR3 O14843 1/20 0.36
HDAC3 O15379 1/20 0.36
HDAC1 Q13547 1/20 0.36
HDAC2 Q92769 1/20 0.36
HDAC8 Q9BY41 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1030692 0.94 CA2 (0.58) CA2TSHRCYP3A4NFKB1NPSR1
SCHEMBL1506862 0.94 CA2 (0.58) CA2TSHRCYP3A4NFKB1NPSR1
SCHEMBL8747771 0.94 CA2 (0.58) CA2TSHRCYP3A4NFKB1NPSR1
SCHEMBL8574352 0.94 CA2 (0.58) CA2TSHRCYP3A4NFKB1NPSR1
SCHEMBL10670321 0.94 CA2 (0.58) CA2TSHRCYP3A4NFKB1NPSR1
SCHEMBL5079455 0.94 CA2 (0.58) CA2TSHRCYP3A4NFKB1NPSR1
Potassium Ion SCHEMBL267337 0.94
SCHEMBL17178412 0.94 CA2 (0.58) CA2TSHRCYP3A4NFKB1NPSR1
SCHEMBL3343198 0.94 CA2 (0.58) CA2TSHRCYP3A4NFKB1NPSR1
Zinc Ion SCHEMBL2355344 0.94 CA2 (0.58) CA2TSHRCYP3A4NFKB1NPSR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2431986-B1 Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method MITSUBISHI MATERIALS CORP (JP) 2017-06-21 EP claimed
US-9595393-B2 Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method MITSUBISHI MATERIALS CORPORATION (JP) 2017-03-14 US claimed
US-9018118-B2 Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method MITSUBISHI MATERIALS CORPORATION (JP) 2015-04-28 US claimed
EP-2608219-B1 Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method MITSUBISHI MATERIALS CORP (JP) 2015-03-04 EP claimed
EP-2608219-A1 Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method Mitsubishi Materials Corporation (JP) 2013-06-26 EP claimed
US-20130155571-A1 DIELECTRIC THIN FILM-FORMING COMPOSITION, METHOD OF FORMING DIELECTRIC THIN FILM AND DIELECTRIC THIN FILM FORMED BY THE METHOD STMicroelectronics(Tours) SAS (FR) 2013-06-20 US claimed
EP-2431986-A1 Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method Mitsubishi Materials Corporation (JP) 2012-03-21 EP claimed
US-20120055372-A1 DIELECTRIC-THIN-FILM FORMING COMPOSITION, METHOD OF FORMING DIELECTRIC THIN FILM, AND DIELECTRIC THIN FILM FORMED BY THE METHOD MITSUBISHI MATERIALS CORPORATION (JP) 2012-03-08 US claimed
CN-107073516-B Method for producing structure having concave pattern, resin composition, method for forming conductive film, electronic circuit, and electronic device JSR株式会社 2020-09-15 CN disclosed
CN-105143977-B Method for producing substrate having concave pattern, composition, method for forming conductive film, electronic circuit, and electronic device JSR株式会社 2020-01-07 CN disclosed
EP-3409729-B1 ELECTROCONDUCTIVE COMPOSITION, PRODUCTION PROCESS THEREFOR, AND ELECTROCONDUCTIVE MATERIAL TOYO INK SC HOLDINGS CO LTD (JP) 2019-12-18 EP disclosed
US-10392699-B2 Method for manufacturing structure having recessed pattern, resin composition, method for forming electroconductive film, electronic circuit, and electronic device JSR CORPORATION (JP) 2019-08-27 US disclosed
US-20190035513-A1 ELECTROCONDUCTIVE COMPOSITION, METHOD FOR PRODUCING THE SAME, AND ELECTROCONDUCTIVE MATERIAL TOYO INK SC HOLDINGS CO., LTD. (JP) 2019-01-31 US disclosed
EP-3409729-A1 ELECTROCONDUCTIVE COMPOSITION, PRODUCTION PROCESS THEREFOR, AND ELECTROCONDUCTIVE MATERIAL Toyo Ink SC Holdings Co., Ltd. (JP) 2018-12-05 EP disclosed
EP-2608219-B1 Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method MITSUBISHI MATERIALS CORP (JP) 2015-03-04 EP disclosed
EP-2608219-A1 Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method Mitsubishi Materials Corporation (JP) 2013-06-26 EP disclosed
US-20130155571-A1 DIELECTRIC THIN FILM-FORMING COMPOSITION, METHOD OF FORMING DIELECTRIC THIN FILM AND DIELECTRIC THIN FILM FORMED BY THE METHOD STMicroelectronics(Tours) SAS (FR) 2013-06-20 US disclosed
EP-2431986-A1 Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method Mitsubishi Materials Corporation (JP) 2012-03-21 EP disclosed
US-20120055372-A1 DIELECTRIC-THIN-FILM FORMING COMPOSITION, METHOD OF FORMING DIELECTRIC THIN FILM, AND DIELECTRIC THIN FILM FORMED BY THE METHOD MITSUBISHI MATERIALS CORPORATION (JP) 2012-03-08 US disclosed
EP-2426684-A1 Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method MITSUBISHI MATERIALS CORPORATION (JP) 2012-03-07 EP disclosed