⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4368546 | 1.00 | — | — | |
| SCHEMBL3248410 | 0.87 | — | — | |
| SCHEMBL5858664 | 0.87 | — | — | |
| SCHEMBL15843897 | 0.87 | — | — | |
| SCHEMBL3467470 | 0.82 | — | — | |
| SCHEMBL33275 | 0.82 | — | — | |
| SCHEMBL2539870 | 0.67 | — | — | |
| SCHEMBL5434695 | 0.67 | — | — | |
| SCHEMBL1796527 | 0.67 | — | — | |
| SCHEMBL4913395 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1721 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118248627-A | Damascus process, semiconductor integrated circuit structure, polishing process and wafer | 季华实验室 | 2024-06-25 | — | — | CN | claimed |
| US-11856857-B2 | Integrated thermoelectric devices on insulating media | SHEETAK, INC. (US) | 2023-12-26 | — | — | US | claimed |
| US-11848385-B2 | Localized protection layer for laser annealing process | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-12-19 | — | — | US | claimed |
| US-20230371380-A1 | THERMOELECTRIC DEVICES ON CERAMIC | SHEETAK, INC. (US) | 2023-11-16 | — | — | US | claimed |
| WO-2023220244-A1 | THERMOELECTRIC DEVICES ON CERAMICS | SHEETAK, INC. (US) | 2023-11-16 | — | — | WO | claimed |
| CN-111261585-B | Electrochemical plating system and process execution method, and method for forming semiconductor structure | 台湾积体电路制造股份有限公司 | 2023-11-10 | — | — | CN | claimed |
| US-20230260835-A1 | CONTACT FOR ELECTRONIC COMPONENT | STMICROELECTRONICS (ROUSSET) SAS (FR) | 2023-08-17 | — | — | US | claimed |
| CN-110858562-B | Method for manufacturing semiconductor element and semiconductor element manufactured by same | 联华电子股份有限公司 | 2023-07-11 | — | — | CN | claimed |
| CN-111293164-B | Semiconductor device with a plurality of semiconductor chips | 南亚科技股份有限公司 | 2023-03-14 | — | — | CN | claimed |
| US-20230045689-A1 | METHOD OF FORMING INTERCONNECT FOR SEMICONDUCTOR DEVICE | APPLIED MATERIALS, INC. (US) | 2023-02-09 | — | — | US | claimed |
| US-6228771-B1 | Chemical mechanical polishing process for low dishing of metal lines in semiconductor wafer fabrication | INFINEON TECHNOLOGIES NORTH AMERICA CORP. | 2001-05-08 | — | — | US | claimed |
| US-6225204-B1 | Method for preventing poisoned vias and trenches | UNITED MICROELECTRONICS CORP. (TW) | 2001-05-01 | — | — | US | claimed |
| US-6218247-B1 | Method for fabricating mask ROM | WINBOND ELECTRONICS CORP. (TW) | 2001-04-17 | — | — | US | claimed |
| US-6181013-B1 | Method for selective growth of Cu3Ge or Cu5Si for passivation of damascene copper structures and device manufactured thereby | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2001-01-30 | — | — | US | claimed |
| US-6177347-B1 | In-situ cleaning process for Cu metallization | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2001-01-23 | — | — | US | claimed |
| US-6174804-B1 | Dual damascene manufacturing process | UNITED MICROELECTRONICS CORP. (TW) | 2001-01-16 | — | — | US | claimed |
| US-6171968-B1 | Method of forming damascene structure having borderless via design | UNITED MICROELECTRONICS CORP. (TW) | 2001-01-09 | — | — | US | claimed |
| US-6069066-A | Method of forming bonding pad | UNITED MICROELECTRONICS CORP. (TW) | 2000-05-30 | — | — | US | claimed |
| US-6048797-A | Method of manufacturing interconnects | UNITED MICROELECTRONICS CORP. (TW) | 2000-04-11 | — | — | US | claimed |
| US-6046108-A | Method for selective growth of Cu3 Ge or Cu5 Si for passivation of damascene copper structures and device manufactured thereby | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2000-04-04 | — | — | US | claimed |