⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL150753 | 1.00 | — | — | |
| SCHEMBL3248410 | 0.87 | — | — | |
| SCHEMBL5858664 | 0.87 | — | — | |
| SCHEMBL15843897 | 0.87 | — | — | |
| SCHEMBL3467470 | 0.82 | — | — | |
| SCHEMBL33275 | 0.82 | — | — | |
| SCHEMBL2539870 | 0.67 | — | — | |
| SCHEMBL5434695 | 0.67 | — | — | |
| SCHEMBL1796527 | 0.67 | — | — | |
| SCHEMBL4913395 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-104862750-B | Electrodeposition composition and the method using the composition coating semiconductor substrate | 埃其玛公司 | 2018-02-06 | — | — | CN | claimed |
| CN-104465576-B | Semiconductor device and method for manufacturing the same | 南亚科技股份有限公司 | 2017-10-13 | — | — | CN | claimed |
| US-9659886-B2 | Method of fabricating semiconductor device having voids between top metal layers of metal interconnects | NANYA TECHNOLOGY CORPORATION (TW) | 2017-05-23 | — | — | US | claimed |
| US-20160307859-A1 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | NANYA TECHNOLOGY CORP (TW) | 2016-10-20 | — | — | US | claimed |
| US-9418949-B2 | Semiconductor device having voids between top metal layers of metal interconnects | NANYA TECHNOLOGY CORPORATION (TW) | 2016-08-16 | — | — | US | claimed |
| CN-104862750-A | Electrodeposition composition and method for coating a semiconductor substrate using composition | ALCHIMER | 2015-08-26 | — | — | CN | claimed |
| CN-104465576-A | Semiconductor device and method for manufacturing the same | NANYA TECHNOLOGY CORP | 2015-03-25 | — | — | CN | claimed |
| US-20150076698-A1 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | NANYA TECHNOLOGY CORPORATION (TW) | 2015-03-19 | — | — | US | claimed |
| EP-2279290-B1 | ELECTROPLATING COMPOSITION AND PROCESS FOR COATING A SEMICONDUCTOR SUBSTRATE USING SAID COMPOSITION | ALCHIMER (FR) | 2014-12-17 | — | — | EP | claimed |
| US-8591715-B2 | Electrodeposition composition and method for coating a semiconductor substrate using the said composition | ALCHIMER (FR) | 2013-11-26 | — | — | US | claimed |
| CN-102016129-A | Electrodeposition composition and method for coating semiconductor substrate using the same | ALCHIMER | 2011-04-13 | — | — | CN | claimed |
| US-20090294293-A1 | ELECTRODEPOSITION COMPOSITION AND METHOD FOR COATING A SEMICONDUCTOR SUBSTRATE USING THE SAID COMPOSITION | ALCHIMER (FR) | 2009-12-03 | — | — | US | claimed |
| US-6181013-B1 | Method for selective growth of Cu3Ge or Cu5Si for passivation of damascene copper structures and device manufactured thereby | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2001-01-30 | — | — | US | claimed |
| US-6046108-A | Method for selective growth of Cu3 Ge or Cu5 Si for passivation of damascene copper structures and device manufactured thereby | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2000-04-04 | — | — | US | claimed |
| CN-104465576-B | Semiconductor device and method for manufacturing the same | 南亚科技股份有限公司 | 2017-10-13 | — | — | CN | disclosed |
| US-9659886-B2 | Method of fabricating semiconductor device having voids between top metal layers of metal interconnects | NANYA TECHNOLOGY CORPORATION (TW) | 2017-05-23 | — | — | US | disclosed |
| US-20160307859-A1 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | NANYA TECHNOLOGY CORP (TW) | 2016-10-20 | — | — | US | disclosed |
| WO-2000003431-A1 | METHOD OF FORMING METAL INTERCONNECTS | APPLIED MATERIALS, INC. (US) | 2000-01-20 | — | — | WO | disclosed |
| WO-1999009587-A9 | METHOD OF ETCHING COPPER FOR SEMICONDUCTOR DEVICES | APPLIED MATERIALS INC (US) | 1999-05-14 | — | — | WO | disclosed |
| WO-1999009587-A2 | METHOD OF ETCHING COPPER FOR SEMICONDUCTOR DEVICES | APPLIED MATERIALS, INC. (US) | 1999-02-25 | — | — | WO | disclosed |