Predicted protein targets (top 15)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.48 |
| ▸ | TSHR | P16473 | 6/20 | 0.41 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.39 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.39 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.39 |
| ▸ | TBXA2R | P21731 | 1/20 | 0.39 |
| ▸ | GALR3 | O60755 | 1/20 | 0.38 |
| ▸ | MAPT | P10636 | 1/20 | 0.38 |
| ▸ | BLM | P54132 | 1/20 | 0.38 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.38 |
| ▸ | THRB | P10828 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.30 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.30 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.30 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Propylene Glycol Diacetate SCHEMBL107826 | 0.89 | ALDH1A1 (0.43) | ALDH1A1TSHRCHRM2CHRM4CHRM1 | |
| Ether SCHEMBL5485511 | 0.89 | TSHR (0.44) | ALDH1A1TSHRCHRM2CHRM4CHRM1 | |
| Diethylene Glycol Monoethyl Ether SCHEMBL28078235 | 0.89 | ALDH1A1 (0.51) | ALDH1A1TSHRCHRM2CHRM4CHRM1 | |
| SCHEMBL143407 | 0.88 | TSHR (0.38) | ALDH1A1TSHRCHRM2CHRM4CHRM1 | |
| SCHEMBL7160598 | 0.87 | TSHR (0.42) | ALDH1A1TSHRCHRM2CHRM4CHRM1 | |
| SCHEMBL28852993 | 0.87 | MEN1 (0.38) | ALDH1A1TSHRCHRM2CHRM4CHRM1 | |
| 2-Methoxyethanol SCHEMBL7213206 | 0.85 | TSHR (0.44) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| Propanol SCHEMBL15345281 | 0.85 | TSHR (0.44) | ALDH1A1TSHRCHRM2CHRM4CHRM1 | |
| Ethylene Glycol SCHEMBL28792664 | 0.85 | TSHR (0.47) | ALDH1A1TSHRCHRM2CHRM4CHRM1 | |
| Alcohol SCHEMBL2481278 | 0.85 | TSHR (0.47) | ALDH1A1TSHRCHRM2CHRM4CHRM1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114660896-B | Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound | 信越化学工业株式会社 | 2024-06-11 | — | — | CN | disclosed |
| US-12001138-B2 | Composition for forming silicon-containing resist underlayer film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-04 | — | — | US | disclosed |
| US-11934100-B2 | Composition for forming silicon-containing resist underlayer film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-03-19 | — | — | US | disclosed |
| EP-3680275-B1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2024-03-06 | — | — | EP | disclosed |
| EP-3796086-B1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2024-02-28 | — | — | EP | disclosed |
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20230333472-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-19 | — | — | US | disclosed |
| US-20230305405-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-28 | — | — | US | disclosed |
| EP-4250008-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-27 | — | — | EP | disclosed |
| CN-116804825-A | Composition for forming silicon-containing metal hard mask and pattern forming method | 信越化学工业株式会社 | 2023-09-26 | — | — | CN | disclosed |
| US-20200159120-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-05-21 | — | — | US | disclosed |
| CN-109476576-A | Compound, resin, composition, resist pattern forming method, and circuit pattern forming method | 三菱瓦斯化学株式会社 | 2019-03-15 | — | — | CN | disclosed |
| CN-109476575-A | Compound, resin, composition and corrosion-resisting pattern forming method and circuit pattern forming method | 三菱瓦斯化学株式会社 | 2019-03-15 | — | — | CN | disclosed |
| EP-2657767-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2018-10-10 | — | — | EP | disclosed |
| CN-107430337-A | RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD | 三菱瓦斯化学株式会社 | 2017-12-01 | — | — | CN | disclosed |
| CN-107407874-A | Radiation-sensitive composition, amorphous film and corrosion-resisting pattern forming method | 三菱瓦斯化学株式会社 | 2017-11-28 | — | — | CN | disclosed |
| CN-103946204-B | Cyclic compound, its manufacture method, radiation-sensitive composition and corrosion-resisting pattern forming method | 三菱瓦斯化学株式会社 | 2016-08-24 | — | — | CN | disclosed |
| US-8992790-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-31 | — | — | US | disclosed |
| US-20130284699-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-10-31 | — | — | US | disclosed |
| EP-2657767-A1 | Patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2013-10-30 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200159120-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | RPS4X, SIK3, MLX | ALDH1A1 4644/4885TSHR 439/4885CHRM2 2243/4885 |
| US-20230333472-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | RPS4X, SIK3, MLX | ALDH1A1 4644/4885TSHR 439/4885CHRM2 2243/4885 |
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | RPS4X, SIK3, MLX | ALDH1A1 4644/4885TSHR 439/4885CHRM2 2243/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.