Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP1A2 | P05177 | 3/20 | 0.36 |
| ▸ | CYP2A6 | P11509 | 3/20 | 0.33 |
| ▸ | TSHR | P16473 | 2/20 | 0.33 |
| ▸ | AHR | P35869 | 1/20 | 0.32 |
| ▸ | GPR3 | P46089 | 1/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.31 |
| ▸ | MAPT | P10636 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.30 |
| ▸ | HPGD | P15428 | 1/20 | 0.30 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.30 |
| ▸ | CASP1 | P29466 | 1/20 | 0.30 |
| ▸ | RAB9A | P51151 | 1/20 | 0.30 |
| ▸ | CASP7 | P55210 | 1/20 | 0.30 |
| ▸ | ATM | Q13315 | 1/20 | 0.30 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.30 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.30 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1587229 | 0.76 | ALDH1A1 (0.37) | CYP1A2CYP2A6TSHRGPR3KDM4E | |
| SCHEMBL2336588 | 0.72 | CYP1A2 (0.41) | CYP1A2CYP2A6TSHRAHRGPR3 | |
| SCHEMBL718918 | 0.71 | CYP1A2 (0.36) | CYP1A2CYP2A6TSHRAHRALDH1A1 | |
| SCHEMBL29660297 | 0.67 | CYP1A2 (0.53) | CYP1A2CYP2A6TSHRAHRGPR3 | |
| SCHEMBL357443 | 0.67 | CYP1A2 (0.53) | CYP1A2CYP2A6TSHRAHRGPR3 | |
| SCHEMBL293803 | 0.65 | CYP1A2 (0.41) | CYP1A2CYP2A6TSHRAHRALDH1A1 | |
| SCHEMBL559155 | 0.65 | GPR3 (0.35) | CYP1A2CYP2A6TSHRAHRGPR3 | |
| SCHEMBL22499794 | 0.65 | CYP1A2 (0.39) | CYP1A2CYP2A6TSHRAHRGPR3 | |
| Ammonia Solution, Strong SCHEMBL2263911 | 0.64 | CYP1A2 (0.50) | CYP1A2CYP2A6TSHRAHRGPR3 | |
| SCHEMBL28539881 | 0.64 | CYP1A2 (0.50) | CYP1A2CYP2A6TSHRAHRGPR3 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-108807140-B | Method for cleaning and drying semiconductor substrate | 信越化学工业株式会社 | 2023-11-07 | — | — | CN | disclosed |
| US-11572439-B2 | Copolycarbonate and polycarbonate composition comprising the same | LG CHEM, LTD. (KR) | 2023-02-07 | — | — | US | disclosed |
| CN-112789310-B | Copolycarbonates and polycarbonate compositions containing the same | 株式会社LG化学 | 2022-11-15 | — | — | CN | disclosed |
| CN-112789310-A | Copolycarbonates and polycarbonate compositions containing the same | 株式会社LG化学 | 2021-05-11 | — | — | CN | disclosed |
| US-10811247-B2 | Method of cleaning and drying semiconductor substrate | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-10-20 | — | — | US | disclosed |
| EP-3396702-B1 | METHOD OF CLEANING AND DRYING SEMICONDUCTOR SUBSTRATE | SHINETSU CHEMICAL CO (JP) | 2019-08-28 | — | — | EP | disclosed |
| US-20180315594-A1 | METHOD OF CLEANING AND DRYING SEMICONDUCTOR SUBSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-11-01 | — | — | US | disclosed |
| EP-3396702-A1 | METHOD OF CLEANING AND DRYING SEMICONDUCTOR SUBSTRATE | Shin-Etsu Chemical Co., Ltd. (JP) | 2018-10-31 | — | — | EP | disclosed |
| US-9798242-B2 | Rinse solution for pattern formation and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-10-24 | — | — | US | disclosed |
| EP-2905803-B1 | Method for cleaning and drying semiconductor substrate | SHINETSU CHEMICAL CO (JP) | 2017-07-19 | — | — | EP | disclosed |
| US-9632416-B2 | Rinse solution for pattern formation and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-25 | — | — | US | disclosed |
| US-9524863-B2 | Method for cleaning and drying semiconductor substrate | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-12-20 | — | — | US | disclosed |
| US-9372404-B2 | Organic film composition, method for forming organic film and patterning process using this, and heat-decomposable polymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-21 | — | — | US | disclosed |
| US-20160154314-A1 | RINSE SOLUTION FOR PATTERN FORMATION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-02 | — | — | US | disclosed |
| US-20160154312-A1 | RINSE SOLUTION FOR PATTERN FORMATION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-06-02 | — | — | US | disclosed |
| EP-2905803-A1 | Method for cleaning and drying semiconductor substrate | Shin-Etsu Chemical Co., Ltd. (JP) | 2015-08-12 | — | — | EP | disclosed |
| US-20150221500-A1 | METHOD FOR CLEANING AND DRYING SEMICONDUCTOR SUBSTRATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-08-06 | — | — | US | disclosed |
| US-20130302990-A1 | ORGANIC FILM COMPOSITION, METHOD FOR FORMING ORGANIC FILM AND PATTERNING PROCESS USING THIS, AND HEAT-DECOMPOSABLE POLYMER | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-11-14 | — | — | US | disclosed |