SCHEMBL15445453

SCHEMBL15445453

CCC(C)(C)c1ccc(OC(=O)C2CC3CCC2C3)cc1

nearest known ligand 0.41

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
▸ TDP1 Q9NUW8 1/20 0.41
▸ NPC1 O15118 3/20 0.41
▸ RAB9A P51151 3/20 0.41
▸ L3MBTL1 Q9Y468 2/20 0.41
▸ MAPT P10636 2/20 0.41
▸ HPGD P15428 2/20 0.41
▸ ALDH1A1 P00352 1/20 0.41
▸ MAPK1 P28482 1/20 0.41
▸ GFER P55789 1/20 0.41
▸ HRH3 Q9Y5N1 9/20 0.40
▸ RECQL P46063 1/20 0.40
▸ POLB P06746 1/20 0.39
▸ CYP2C9 P11712 1/20 0.39
▸ CNR2 P34972 2/20 0.39
▸ MAOB P27338 2/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14665303 0.85 L3MBTL1 (0.43) TDP1NPC1RAB9AL3MBTL1MAPT
SCHEMBL14068947 0.79 TDP1 (0.54) TDP1NPC1RAB9AMAPTHRH3
SCHEMBL14665322 0.78 TDP1 (0.43) TDP1L3MBTL1HRH3RECQLCNR2
SCHEMBL14665260 0.77 NPC1 (0.47) TDP1NPC1RAB9AL3MBTL1MAPT
SCHEMBL13841334 0.76 L3MBTL1 (0.56) L3MBTL1HPGDALDH1A1POLB
SCHEMBL18746071 0.74 KMT2A (0.49) TDP1NPC1RAB9AL3MBTL1MAPT
SCHEMBL26356355 0.73 L3MBTL1 (0.40) TDP1NPC1RAB9AL3MBTL1MAPT
SCHEMBL14665375 0.72 HPGD (0.42) NPC1RAB9AL3MBTL1MAPTHPGD
SCHEMBL1952350 0.72 TDP1 (0.54) TDP1NPC1RAB9AL3MBTL1MAPT
SCHEMBL1105067 0.72 POLB (0.44) NPC1RAB9AL3MBTL1MAPTHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8889339-B2 Resist pattern forming method, resist pattern, crosslinkable negative chemical amplification resist composition for organic solvent development, resist film and resist-coated mask blanks FUJIFILM CORPORATION (JP) 2014-11-18 — — US disclosed
US-20140030640-A1 RESIST PATTERN FORMING METHOD, RESIST PATTERN, CROSSLINKABLE NEGATIVE CHEMICAL AMPLIFICATION RESIST COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT, RESIST FILM AND RESIST-COATED MASK BLANKS FUJIFILM CORPORATION (JP) 2014-01-30 — — US disclosed
Send feedback