SCHEMBL14665303

SCHEMBL14665303

CCC(C)(C)C(=O)Oc1ccc(OC(=O)C2CC3CCC2C3)cc1

nearest known ligand 0.43

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
▸ L3MBTL1 Q9Y468 3/20 0.43
▸ HPGD P15428 2/20 0.43
▸ NPC1 O15118 2/20 0.43
▸ RAB9A P51151 2/20 0.43
▸ ALDH1A1 P00352 1/20 0.43
▸ MAPT P10636 1/20 0.43
▸ MAPK1 P28482 1/20 0.43
▸ GFER P55789 1/20 0.43
▸ ELANE P08246 3/20 0.41
▸ HSD11B1 P28845 1/20 0.36
▸ KMT2A Q03164 2/20 0.36
▸ MEN1 O00255 1/20 0.36
▸ POLB P06746 1/20 0.36
▸ HSD17B10 Q99714 1/20 0.36
▸ TSHR P16473 1/20 0.36
▸ EPHX2 P34913 1/20 0.36
▸ HTT P42858 1/20 0.36
▸ SMN1; SMN2 Q16637 1/20 0.36
▸ TDP1 Q9NUW8 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15445453 0.85 TDP1 (0.41) L3MBTL1HPGDNPC1RAB9AALDH1A1
SCHEMBL14665375 0.84 HPGD (0.42) L3MBTL1HPGDNPC1RAB9AALDH1A1
SCHEMBL17812681 0.80 ELANE (0.39) L3MBTL1HPGDNPC1RAB9AALDH1A1
SCHEMBL14665299 0.78 HTT (0.38) L3MBTL1NPC1RAB9AELANEKMT2A
SCHEMBL14665293 0.78 KMT2A (0.47) L3MBTL1MAPTELANEHSD11B1KMT2A
SCHEMBL15449155 0.77 HSD11B1 (0.39) L3MBTL1HPGDNPC1RAB9AALDH1A1
SCHEMBL14665260 0.77 NPC1 (0.47) L3MBTL1HPGDNPC1RAB9AALDH1A1
SCHEMBL13841334 0.76 L3MBTL1 (0.56) L3MBTL1HPGDALDH1A1ELANEKMT2A
SCHEMBL18356030 0.76 ELANE (0.38) ELANEKMT2AHTTSMN1; SMN2TDP1
SCHEMBL18746071 0.74 KMT2A (0.49) L3MBTL1HPGDNPC1RAB9AALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8778593-B2 Chemical amplification resist composition, and resist film, resist-coated mask blank, resist pattern forming method and photomask each using the composition FUJIFILM CORPORATION (JP) 2014-07-15 — — US disclosed
US-8778593-B2 Chemical amplification resist composition, and resist film, resist-coated mask blank, resist pattern forming method and photomask each using the composition FUJIFILM CORPORATION (JP) 2014-07-15 — — US disclosed
US-20130029254-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-31 — — US disclosed
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