SCHEMBL1105067

SCHEMBL1105067

CCC(C)(C)OC(=O)C1CC2CCC1C2

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
POLB P06746 1/20 0.44
HSD11B1 P28845 1/20 0.43
HPGD P15428 3/20 0.39
NPC1 O15118 3/20 0.39
RAB9A P51151 3/20 0.39
L3MBTL1 Q9Y468 2/20 0.39
ALDH1A1 P00352 1/20 0.39
MAPT P10636 1/20 0.39
MAPK1 P28482 1/20 0.39
GFER P55789 1/20 0.39
KCNQ3 O43525 1/20 0.38
KCNQ2 O43526 1/20 0.38
KCNQ4 P56696 1/20 0.38
KCNQ5 Q9NR82 1/20 0.38
EPHX2 P34913 1/20 0.38
MEN1 O00255 2/20 0.34
KMT2A Q03164 2/20 0.34
TSHR P16473 1/20 0.33
HSD17B10 Q99714 1/20 0.33
HTT P42858 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL85684 0.83 POLB (0.44) POLBHSD11B1HPGDNPC1RAB9A
SCHEMBL13668773 0.83 POLB (0.44) POLBHSD11B1HPGDNPC1RAB9A
SCHEMBL14651561 0.80 HSD11B1 (0.36) POLBHSD11B1HPGDNPC1RAB9A
SCHEMBL31178057 0.76 POLB (0.49) POLBHSD11B1HPGDNPC1RAB9A
SCHEMBL1862636 0.76 POLB (0.49) POLBHSD11B1HPGDNPC1RAB9A
SCHEMBL17797272 0.75 TP53 (0.39) ALDH1A1TSHRHSD17B10
SCHEMBL14428634 0.75 NR1H2 (0.30)
SCHEMBL9908349 0.75 POLB (0.41) POLBHSD11B1HPGDNPC1RAB9A
SCHEMBL14905911 0.75 POLB (0.38) POLBHSD11B1HPGDNPC1RAB9A
SCHEMBL17070174 0.75 POLB (0.38) POLBHSD11B1HPGDNPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 81 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230305405-A1 COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
US-20230305405-A1 COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
EP-4250008-A1 COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-27 EP disclosed
US-20230244149-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-20230244149-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-20210026246-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-01-28 US disclosed
US-20190258160-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-08-22 US disclosed
US-20180081272-A1 THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-22 US disclosed
US-20180081272-A1 THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-22 US disclosed
US-9902875-B2 Composition for forming a coating type BPSG film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-20120276483-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-01 US disclosed
US-20120276483-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-01 US disclosed
US-8153836-B2 Silsesquioxane compound mixture, hydrolyzable silane compound, making methods, resist composition, patterning process, and substrate processing SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-04-10 US disclosed
EP-1182188-B1 Method for producing carboxylic acid tertiary alkyl ester HONSHU CHEMICAL IND (JP) 2011-03-09 EP disclosed
US-20080311514-A1 SILSESQUIOXANE COMPOUND MIXTURE, HYDROLYZABLE SILANE COMPOUND, MAKING METHODS, RESIST COMPOSITION, PATTERNING PROCESS, AND SUBSTRATE PROCESSING SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-18 US disclosed
US-20080038664-A1 Silsesquioxane compound mixture, method of making, resist composition, and patterning process SHIN-ETSU CHEMICAL CO. LTD. (JP) 2008-02-14 US disclosed
US-7265234-B2 Silsesquioxane compound mixture, method of making, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-09-04 US disclosed
US-7265234-B2 Silsesquioxane compound mixture, method of making, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-09-04 US disclosed
US-6492542-B2 CONTINUALLY ADDING AN ESTERIFICATION AGENT POSSESSING A MONOVALENT ACID GROUP, WHICH AGENT IS ESTER-INTERCHANGEABLE WITH A TERTIARY ALCOHOL, TO A MIXED FLUID OF A CARBOXYLIC ACID AND A TERTIARY ALCOHOL HONSHU CHEMICAL INDUSTRY CO., LTD. (JP) 2002-12-10 US disclosed
EP-1182188-A2 Method for producing carboxylic acid tertiary alkyl ester Honshu Chemical Industry Co., Ltd. (JP) 2002-02-27 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080311514-A1 SILSESQUIOXANE COMPOUND MIXTURE, HYDROLYZABLE SILANE COMPOUND, MAKING METHODS, RESIST COMPOSITION, PATTERNING PROCESS, AND SUBSTRATE PROCESSING STS, LSS, SRMS POLB 841/4885HSD11B1 221/4885HPGD 3311/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.