Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GABRA1 | P14867 | 4/20 | 0.50 |
| ▸ | GABRB2 | P47870 | 2/20 | 0.50 |
| ▸ | GABRG2 | P18507 | 2/20 | 0.46 |
| ▸ | GABRB3 | P28472 | 2/20 | 0.46 |
| ▸ | LMNA | P02545 | 2/20 | 0.46 |
| ▸ | TSHR | P16473 | 2/20 | 0.46 |
| ▸ | FAAH | O00519 | 2/20 | 0.46 |
| ▸ | CA1 | P00915 | 2/20 | 0.46 |
| ▸ | CA2 | P00918 | 2/20 | 0.46 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.46 |
| ▸ | GABRB1 | P18505 | 2/20 | 0.46 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.46 |
| ▸ | HPGD | P15428 | 1/20 | 0.46 |
| ▸ | PTGS1 | P23219 | 1/20 | 0.46 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.46 |
| ▸ | HTR2C | P28335 | 1/20 | 0.46 |
| ▸ | GABRA5 | P31644 | 1/20 | 0.46 |
| ▸ | GABRA3 | P34903 | 1/20 | 0.46 |
| ▸ | HTR2B | P41595 | 1/20 | 0.46 |
| ▸ | GABRA2 | P47869 | 1/20 | 0.46 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2524190 | 0.80 | LMNA (0.46) | GABRA1GABRB2GABRG2GABRB3LMNA | |
| SCHEMBL28929236 | 0.80 | GABRA1 (0.48) | GABRA1GABRB2GABRG2GABRB3LMNA | |
| SCHEMBL272924 | 0.79 | GABRA1 (0.34) | GABRA1GABRB2GABRG2GABRB3LMNA | |
| SCHEMBL31216267 | 0.78 | GABRA1 (0.46) | GABRA1GABRB2GABRG2GABRB3LMNA | |
| SCHEMBL3203948 | 0.76 | GABRA1 (0.44) | GABRA1GABRB2GABRG2GABRB3LMNA | |
| SCHEMBL706816 | 0.76 | GABRA1 (0.44) | GABRA1GABRB2GABRG2GABRB3LMNA | |
| SCHEMBL705420 | 0.76 | GABRA1 (0.44) | GABRA1GABRB2GABRG2GABRB3LMNA | |
| SCHEMBL3481403 | 0.76 | TSHR (0.41) | GABRA1GABRB2GABRG2GABRB3LMNA | |
| Hydrogen Peroxide SCHEMBL20593356 | 0.73 | GABRA1 (0.65) | GABRA1GABRB2GABRG2GABRB3LMNA | |
| Hydrogen Peroxide SCHEMBL99126 | 0.73 | GABRA1 (0.65) | GABRA1GABRB2GABRG2GABRB3LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113168101-B | Photosensitive resin composition, method for producing pattern cured film, interlayer insulating film, coverlay, surface protective film, and electronic component | 艾曲迪微系统股份有限公司 | 2025-02-18 | — | — | CN | disclosed |
| CN-113168102-B | Photosensitive resin composition, method for producing pattern cured product, interlayer insulating film, coverlay, surface protective film, and electronic component | 艾曲迪微系统股份有限公司 | 2024-11-19 | — | — | CN | disclosed |
| CN-112334833-B | Negative photosensitive resin composition, polyimide using same, and method for producing cured relief pattern | 旭化成株式会社 | 2024-09-24 | — | — | CN | disclosed |
| CN-114502617-B | Polyimide precursor, photosensitive resin composition, interlayer insulating film, covercoat, surface protective film, and electronic component | 艾曲迪微系统股份有限公司 | 2024-05-03 | — | — | CN | disclosed |
| CN-117836927-A | Resin cured film, semiconductor device, and method for manufacturing semiconductor device | 株式会社力森诺科 | 2024-04-05 | — | — | CN | disclosed |
| CN-117730398-A | Resin composition for dicing protective layer and method for processing semiconductor wafer | 株式会社力森诺科 | 2024-03-19 | — | — | CN | disclosed |
| CN-117280447-A | Photosensitive resin composition selection method, pattern cured film production method, cured film, semiconductor device, and semiconductor device production method | 株式会社力森诺科 | 2023-12-22 | — | — | CN | disclosed |
| CN-116710498-A | Polyimide precursor resin composition and method for producing same | 旭化成株式会社 | 2023-09-05 | — | — | CN | disclosed |
| CN-116609998-A | Polyimide precursor, negative photosensitive resin composition, and method for producing cured relief pattern using same | 旭化成株式会社 | 2023-08-18 | — | — | CN | disclosed |
| CN-113820920-B | Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device | 旭化成株式会社 | 2023-07-04 | — | — | CN | disclosed |
| CN-116194840-A | Photosensitive resin composition, permanent resist, method for forming permanent resist, and method for inspecting cured film for permanent resist | 株式会社力森诺科 | 2023-05-30 | — | — | CN | disclosed |
| EP-2855018-B1 | PROCESS OF PREPARATION OF A CATALYST COMPRISING A GROUP VIII METAL AND SILICON AND PROCESS OF SELECTIVE HYDROGENATION USING THAT CATALYST | IFP ENERGIES NOW (FR) | 2017-10-18 | — | — | EP | disclosed |
| US-9695095-B2 | Process for preparing a catalyst based on a group VIII metal and containing silicon, and a process of selective hydrogenation implementing said catalyst | IFP Energies Nouvelles (FR) | 2017-07-04 | — | — | US | disclosed |
| US-20150141718-A1 | PROCESS FOR PREPARING A CATALYST BASED ON A GROUP VIII METAL AND CONTAINING SILICON, AND A PROCESS OF SELECTIVE HYDROGENATION IMPLEMENTING SAID CATALYST | IFP Energies Nouvelles (FR) | 2015-05-21 | — | — | US | disclosed |
| EP-2855018-A1 | PROCESS FOR PREPARING A CATALYST BASED ON A GROUP VIII METAL AND CONTAINING SILICON AND SELECTIVE HYDROGENATION PROCESS USING SAID CATALYST | IFP Energies nouvelles (FR) | 2015-04-08 | — | — | EP | disclosed |
| WO-2013175085-A1 | PROCESS FOR PREPARING A CATALYST BASED ON A GROUP VIII METAL AND CONTAINING SILICON AND SELECTIVE HYDROGENATION PROCESS USING SAID CATALYST | IFP Energies Nouvelles (FR) | 2013-11-28 | — | — | WO | disclosed |