SCHEMBL3481403

SCHEMBL3481403

CCCC(C)c1ccccc1[SiH2]O

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.41
SMN1; SMN2 Q16637 1/20 0.34
NPC1 O15118 1/20 0.34
RAB9A P51151 1/20 0.34
POLB P06746 2/20 0.33
GABRA1 P14867 2/20 0.32
GABRB2 P47870 1/20 0.32
NOS3 P29474 2/20 0.32
NOS1 P29475 2/20 0.32
NOS2 P35228 2/20 0.32
AOC3 Q16853 2/20 0.32
CYSLTR2 Q9NS75 1/20 0.31
CYSLTR1 Q9Y271 1/20 0.31
LMNA P02545 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
FFAR1 O14842 1/20 0.31
GPR84 Q9NQS5 1/20 0.31
GABRG2 P18507 1/20 0.31
GABRB3 P28472 1/20 0.31
SOAT1 P35610 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481495 0.89 TSHR (0.39) TSHRSMN1; SMN2POLBCYSLTR2CYSLTR1
SCHEMBL3481675 0.81 TSHR (0.37) TSHRSMN1; SMN2FFAR1GPR84
SCHEMBL31380293 0.80 TSHR (0.48) TSHRSMN1; SMN2NPC1RAB9APOLB
SCHEMBL15533828 0.76 GABRA1 (0.50) TSHRGABRA1GABRB2LMNAL3MBTL1
Hydrogen Peroxide SCHEMBL9456646 0.75 TSHR (0.45) TSHRSMN1; SMN2NPC1RAB9APOLB
SCHEMBL352351 0.75 TSHR (0.73) TSHRSMN1; SMN2NPC1RAB9APOLB
SCHEMBL14864537 0.74 TSHR (0.43) TSHRSMN1; SMN2NPC1RAB9APOLB
SCHEMBL2697157 0.72 TSHR (0.42) TSHRSMN1; SMN2NPC1RAB9APOLB
SCHEMBL11800593 0.72 ESR1 (0.45) TSHRSMN1; SMN2FFAR1GPR84
SCHEMBL1834375 0.72 GABRA1 (0.54) TSHRSMN1; SMN2GABRA1GABRB2LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed