SCHEMBL15613901

SCHEMBL15613901

CCC(C)(C)OC(=O)NCCCC(=O)O

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ MEN1 O00255 3/20 0.46
▸ KMT2A Q03164 3/20 0.46
▸ GAA P10253 1/20 0.46
▸ TDP1 Q9NUW8 1/20 0.45
▸ HTT P42858 1/20 0.43
▸ PLA2G4A P47712 1/20 0.42
▸ ADRA1A P35348 1/20 0.42
▸ EPHX2 P34913 2/20 0.40
▸ PRMT1 Q99873 1/20 0.40
▸ MAOA P21397 1/20 0.40
▸ MAOB P27338 1/20 0.40
▸ PLA2G2A P14555 1/20 0.39
▸ CA12 O43570 2/20 0.38
▸ CA1 P00915 2/20 0.38
▸ CA2 P00918 2/20 0.38
▸ CA9 Q16790 2/20 0.38
▸ ACHE P22303 1/20 0.38
▸ EPHX1 P07099 1/20 0.38
▸ TSHR P16473 1/20 0.37
▸ MAPT P10636 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15613938 0.95 ADRA1A (0.49) MEN1KMT2AGAATDP1PLA2G4A
SCHEMBL15613928 0.93 ADRA1A (0.51) MEN1KMT2AGAATDP1PLA2G4A
SCHEMBL15613900 0.89 MEN1 (0.41) MEN1KMT2AGAATDP1EPHX2
SCHEMBL15613902 0.86 MEN1 (0.46) MEN1KMT2AGAATDP1HTT
SCHEMBL9893642 0.85 TDP1 (0.59) MEN1KMT2AGAATDP1MAOA
SCHEMBL1851058 0.85 TDP1 (0.59) MEN1KMT2AGAATDP1MAOA
SCHEMBL1850304 0.85 TDP1 (0.59) MEN1KMT2AGAATDP1MAOA
SCHEMBL1849286 0.85 TDP1 (0.59) MEN1KMT2AGAATDP1MAOA
SCHEMBL1852564 0.85 TDP1 (0.59) MEN1KMT2AGAATDP1MAOA
SCHEMBL1851030 0.85 TDP1 (0.59) MEN1KMT2AGAATDP1MAOA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9250518-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 — — US disclosed
US-9250518-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 — — US disclosed
US-20150125794-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-07 — — US disclosed
US-20150125794-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-07 — — US disclosed
US-9017922-B2 Chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-04-28 — — US disclosed
US-9017922-B2 Chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-04-28 — — US disclosed
US-20140080055-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-03-20 — — US disclosed
US-20140080055-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-03-20 — — US disclosed
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