Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ADRA1A | P35348 | 1/20 | 0.49 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.47 |
| ▸ | PRMT1 | Q99873 | 1/20 | 0.47 |
| ▸ | EPHX2 | P34913 | 11/20 | 0.46 |
| ▸ | PLA2G2A | P14555 | 1/20 | 0.45 |
| ▸ | MEN1 | O00255 | 1/20 | 0.45 |
| ▸ | GAA | P10253 | 1/20 | 0.45 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.45 |
| ▸ | MAOA | P21397 | 1/20 | 0.42 |
| ▸ | MAOB | P27338 | 1/20 | 0.42 |
| ▸ | PLA2G4A | P47712 | 1/20 | 0.41 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15613928 | 0.98 | ADRA1A (0.51) | ADRA1ATDP1PRMT1EPHX2PLA2G2A | |
| SCHEMBL15613901 | 0.95 | MEN1 (0.46) | ADRA1ATDP1PRMT1EPHX2PLA2G2A | |
| SCHEMBL15613900 | 0.88 | MEN1 (0.41) | TDP1EPHX2PLA2G2AMEN1GAA | |
| SCHEMBL1852564 | 0.88 | TDP1 (0.59) | TDP1MEN1GAAKMT2AMAOA | |
| SCHEMBL1849286 | 0.88 | TDP1 (0.59) | TDP1MEN1GAAKMT2AMAOA | |
| SCHEMBL1851030 | 0.88 | TDP1 (0.59) | TDP1MEN1GAAKMT2AMAOA | |
| SCHEMBL1850304 | 0.88 | TDP1 (0.59) | TDP1MEN1GAAKMT2AMAOA | |
| SCHEMBL1851058 | 0.88 | TDP1 (0.59) | TDP1MEN1GAAKMT2AMAOA | |
| SCHEMBL9893642 | 0.88 | TDP1 (0.59) | TDP1MEN1GAAKMT2AMAOA | |
| SCHEMBL904074 | 0.84 | TDP1 (0.66) | ADRA1ATDP1PRMT1EPHX2PLA2G2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2023008346-A1 | ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING ELECTRONIC DEVICE | 富士フイルム株式会社 | 2023-02-02 | — | — | WO | disclosed |
| US-20210165325-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND | FUJIFILM CORPORATION (JP) | 2021-06-03 | — | — | US | disclosed |
| US-20210103217-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND PHOTO MASK | FUJIFILM CORPORATION (JP) | 2021-04-08 | — | — | US | disclosed |
| WO-2021065450-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR PRODUCING ELECTRONIC DEVICE | 富士フイルム株式会社 | 2021-04-08 | — | — | WO | disclosed |
| WO-2020045535-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, PHOTOMASK, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND COMPOUND | 富士フイルム株式会社 | 2020-03-05 | — | — | WO | disclosed |
| WO-2020045534-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMATION METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND | 富士フイルム株式会社 | 2020-03-05 | — | — | WO | disclosed |
| US-9250518-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-02-02 | — | — | US | disclosed |
| US-9250518-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-02-02 | — | — | US | disclosed |
| US-20150125794-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-05-07 | — | — | US | disclosed |
| US-20150125794-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-05-07 | — | — | US | disclosed |
| US-9017922-B2 | Chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-04-28 | — | — | US | disclosed |
| US-9017922-B2 | Chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-04-28 | — | — | US | disclosed |
| US-20140080055-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-03-20 | — | — | US | disclosed |
| US-20140080055-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-03-20 | — | — | US | disclosed |