SCHEMBL15907706

SCHEMBL15907706

C=Cc1ccc(CCCCOC(=O)C(C)(O)C(F)(F)F)cc1

nearest known ligand 0.38

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
THRB P10828 6/20 0.36
THRA P10827 5/20 0.35
PPARA Q07869 2/20 0.35
PPARG P37231 1/20 0.35
NAAA Q02083 4/20 0.35
MEN1 O00255 1/20 0.35
KMT2A Q03164 1/20 0.35
FAAH O00519 1/20 0.35
CA1 P00915 1/20 0.34
CA2 P00918 1/20 0.34
AKR1B10 O60218 1/20 0.33
AKR1B1 P15121 1/20 0.33
MET P08581 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15907708 0.96 PPARA (0.38) THRBTHRAPPARAPPARGCA1
SCHEMBL15907704 0.91 CA1 (0.41) THRBPPARAPPARGMEN1KMT2A
SCHEMBL16687563 0.87 NAAA (0.36) THRBTHRANAAAMEN1KMT2A
SCHEMBL16687562 0.83 AKR1B10 (0.38) THRBTHRAPPARAPPARGNAAA
SCHEMBL15907716 0.83 MEN1 (0.39) PPARAPPARGMEN1KMT2ACA1
SCHEMBL15907711 0.78 NAAA (0.37) THRBTHRANAAAMEN1KMT2A
SCHEMBL15907710 0.78 CA1 (0.42) PPARAPPARGMEN1KMT2ACA1
SCHEMBL7530246 0.76 TSHR (0.55) THRBTHRAMEN1KMT2ACA1
SCHEMBL15907717 0.74 AKR1B10 (0.39) THRBTHRAPPARAPPARGNAAA
SCHEMBL27272361 0.73 ELANE (0.42) MEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9846360-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-19 US disclosed
US-9846360-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-19 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-20170003590-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-05 US disclosed
US-20170003590-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-05 US disclosed
US-20160363866-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-12-15 US disclosed
US-20160363866-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-12-15 US disclosed
US-9023587-B2 Negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-05 US disclosed
US-9023587-B2 Negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-05 US disclosed
US-20140212810-A1 NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-07-31 US disclosed