SCHEMBL15907710

SCHEMBL15907710

C=Cc1ccc(CCOC(=O)C(O)(C(F)(F)F)C(F)(F)F)cc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 4/20 0.42
CA2 P00918 2/20 0.42
MET P08581 6/20 0.40
CA12 O43570 3/20 0.40
CA4 P22748 3/20 0.40
CA6 P23280 3/20 0.40
CA5A P35218 3/20 0.40
CA7 P43166 3/20 0.40
CA9 Q16790 3/20 0.40
CA14 Q9ULX7 3/20 0.40
CA5B Q9Y2D0 3/20 0.40
AKR1B10 O60218 4/20 0.35
AKR1B1 P15121 4/20 0.35
MAOB P27338 1/20 0.35
APP P05067 2/20 0.35
HCAR2 Q8TDS4 1/20 0.34
CYP3A4 P08684 2/20 0.33
ALOX15 P16050 2/20 0.33
ALOX12 P18054 2/20 0.33
MAPK1 P28482 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16687562 0.92 AKR1B10 (0.38) CA1CA2METCA12CA4
SCHEMBL16687563 0.91 NAAA (0.36) CA1CA2AKR1B10AKR1B1MEN1
SCHEMBL15907704 0.86 CA1 (0.41) CA1CA2METCA12CA4
SCHEMBL15782695 0.85 CA1 (0.40) CA1CA2CA12CA4CA6
SCHEMBL24142153 0.80 HCAR2 (0.49) CA1CA2AKR1B10AKR1B1MAOB
SCHEMBL15907708 0.79 PPARA (0.38) CA1CA2METAKR1B10AKR1B1
SCHEMBL15907715 0.78 MET (0.41) CA1CA2METCA12CA4
SCHEMBL15907706 0.78 THRB (0.36) CA1CA2METAKR1B10AKR1B1
SCHEMBL29067274 0.75 MET (0.54) CA1METCA12CA4CA6
SCHEMBL18868407 0.75 CA1 (0.46) CA1CA2METCA12CA4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9846360-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-19 US disclosed
US-9846360-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-19 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-20170003590-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-05 US disclosed
US-20170003590-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-05 US disclosed
US-20160363866-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-12-15 US disclosed
US-20160363866-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-12-15 US disclosed
US-9023587-B2 Negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-05 US disclosed
US-9023587-B2 Negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-05-05 US disclosed
US-20140212810-A1 NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-07-31 US disclosed