SCHEMBL15946182

SCHEMBL15946182

CCC(O)COC(=O)CC(=O)OCC(O)CC

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MGAM O43451 1/20 0.50
GAA P10253 1/20 0.50
SI P14410 1/20 0.50
MGAM2 Q2M2H8 1/20 0.50
KDM4E B2RXH2 1/20 0.44
DUSP3 P51452 1/20 0.44
MEN1 O00255 1/20 0.44
KMT2A Q03164 1/20 0.44
LMNA P02545 1/20 0.44
ENPP2 Q13822 4/20 0.39
LPAR6 P43657 1/20 0.39
LPAR1 Q92633 1/20 0.39
LPAR4 Q99677 1/20 0.39
LPAR5 Q9H1C0 1/20 0.39
LPAR2 Q9HBW0 1/20 0.39
LPAR3 Q9UBY5 1/20 0.39
MAPT P10636 1/20 0.38
DGKA P23743 1/20 0.38
CYP3A4 P08684 1/20 0.37
TSHR P16473 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14787710 0.94 MGAM (0.44) MGAMGAASIMGAM2KDM4E
SCHEMBL16350387 0.89 MGAM (0.44) MGAMGAASIMGAM2KDM4E
SCHEMBL11695466 0.88 KDM4E (0.41) MGAMGAASIMGAM2KDM4E
SCHEMBL586987 0.86 KDM4E (0.44) KDM4EDUSP3MEN1KMT2ALMNA
SCHEMBL4908847 0.86 LMNA (0.53) KDM4EDUSP3MEN1KMT2ALMNA
SCHEMBL992127 0.86 KDM4E (0.44) KDM4EDUSP3MEN1KMT2ALMNA
SCHEMBL992128 0.86 KDM4E (0.44) KDM4EDUSP3MEN1KMT2ALMNA
SCHEMBL2367987 0.82 KDM4E (0.37) MGAMGAASIMGAM2KDM4E
SCHEMBL8955207 0.82 KDM4E (0.37) MGAMGAASIMGAM2KDM4E
SCHEMBL23926235 0.82 MGAM (0.46) MGAMGAASIMGAM2KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9910354-B2 Resist underlayer film-forming composition and method for forming resist pattern using the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-03-06 US disclosed
US-20170250079-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-08-31 US disclosed
US-20170045820-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-02-16 US disclosed
US-9534140-B2 Resist underlayer film-forming composition NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-01-03 US disclosed
US-9448480-B2 Resist underlayer film formation composition and method for forming resist pattern using the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-09-20 US disclosed
US-20160238936-A1 RESIST UNDERLAYER FILM FORMATION COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-08-18 US disclosed
US-20160222262-A1 POLYMER AND COMPOSITION INCLUDING SAME, AND ADHESIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-08-04 US disclosed
US-20150337164-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-11-26 US disclosed
US-8962234-B2 Resist underlayer film forming composition and method for forming resist pattern using the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-02-24 US disclosed
US-20140228488-A1 POLYMER AND COMPOSITION INCLUDING SAME, AND ADHESIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-08-14 US disclosed
CN-101072760-B Malonamide derivatives as gamma-secretase inhibitors for the treatment of Alzheimer's disease F. HOFFMANN-LA ROCHE AG (CH) 2011-12-28 CN disclosed
CN-101072760-A Malonamide derivatives as gamma-secretase inhibitors for the treatment of Alzheimer's disease HOFFMANN LA ROCHE (CH) 2007-11-14 CN disclosed