SCHEMBL15965313

SCHEMBL15965313

CO[Si](CCCOc1ccc([PH](c2ccccc2)(c2ccccc2)c2ccccc2)cc1)(OC)OC

nearest known ligand 0.43

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
DRD2 P14416 3/20 0.43
DRD4 P21917 3/20 0.43
DRD3 P35462 3/20 0.43
KCNA3 P22001 1/20 0.41
LTA4H P09960 2/20 0.41
MAPT P10636 4/20 0.39
L3MBTL1 Q9Y468 3/20 0.39
TDP1 Q9NUW8 1/20 0.39
RAB9A P51151 2/20 0.38
NPC1 O15118 1/20 0.38
ALDH1A1 P00352 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
HSD17B10 Q99714 1/20 0.38
HPGD P15428 1/20 0.38
ATM Q13315 1/20 0.38
HTR1B P28222 1/20 0.38
LSS P48449 1/20 0.37
TSHR P16473 2/20 0.37
TXNRD1 Q16881 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2818268 0.85 KCNA3 (0.58) DRD2DRD4DRD3KCNA3LTA4H
Ammonia Solution, Strong SCHEMBL22654341 0.83 KCNA3 (0.56) DRD2DRD4DRD3KCNA3LTA4H
SCHEMBL14632314 0.79 MAPT (0.50) DRD2DRD4DRD3MAPTL3MBTL1
SCHEMBL28980695 0.79 KCNA3 (0.50) DRD2DRD4DRD3KCNA3LTA4H
Boric Acid SCHEMBL28980657 0.79 KCNA3 (0.50) DRD2DRD4DRD3KCNA3LTA4H
SCHEMBL1855073 0.78 KCNA3 (0.59) DRD2DRD4DRD3KCNA3LTA4H
SCHEMBL7132447 0.76 DRD2 (0.52) DRD2DRD4DRD3L3MBTL1NPC1
SCHEMBL2798805 0.76 L3MBTL1 (0.63) LTA4HMAPTL3MBTL1RAB9AALDH1A1
SCHEMBL8015992 0.75 TDP1 (0.50) MAPTTDP1RAB9ANPC1ALDH1A1
SCHEMBL21694302 0.73 CA4 (0.59) LTA4HL3MBTL1TDP1RAB9ANPC1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9315670-B2 Composition for forming resist underlayer film and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-19 US disclosed
US-20140235796-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-21 US disclosed