Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 8/20 | 0.52 |
| ▸ | SMN1; SMN2 | Q16637 | 4/20 | 0.52 |
| ▸ | POLB | P06746 | 2/20 | 0.52 |
| ▸ | CA2 | P00918 | 1/20 | 0.52 |
| ▸ | TYR | P14679 | 1/20 | 0.52 |
| ▸ | KDM4E | B2RXH2 | 5/20 | 0.43 |
| ▸ | HSPA5 | P11021 | 1/20 | 0.42 |
| ▸ | TSHR | P16473 | 3/20 | 0.42 |
| ▸ | TP53 | P04637 | 2/20 | 0.42 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.42 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.42 |
| ▸ | CYP2C9 | P11712 | 3/20 | 0.41 |
| ▸ | CYP2C19 | P33261 | 3/20 | 0.41 |
| ▸ | HIF1A | Q16665 | 3/20 | 0.41 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.40 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.40 |
| ▸ | MAPT | P10636 | 2/20 | 0.39 |
| ▸ | LMNA | P02545 | 1/20 | 0.39 |
| ▸ | GAA | P10253 | 1/20 | 0.39 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1930777 | 0.90 | ALDH1A1 (0.56) | ALDH1A1SMN1; SMN2POLBCA2TYR | |
| Water SCHEMBL28586819 | 0.87 | ALDH1A1 (0.54) | ALDH1A1SMN1; SMN2POLBCA2TYR | |
| SCHEMBL22050670 | 0.85 | POLB (0.46) | ALDH1A1SMN1; SMN2POLBCA2TYR | |
| SCHEMBL29611318 | 0.85 | POLB (0.46) | ALDH1A1SMN1; SMN2POLBCA2TYR | |
| SCHEMBL8943131 | 0.85 | POLB (0.65) | ALDH1A1SMN1; SMN2POLBCA2TYR | |
| SCHEMBL8382333 | 0.83 | ALDH1A1 (0.50) | ALDH1A1SMN1; SMN2POLBCA2TYR | |
| SCHEMBL10342450 | 0.83 | POLB (0.70) | ALDH1A1SMN1; SMN2POLBCA2TYR | |
| SCHEMBL5158750 | 0.83 | POLB (0.50) | ALDH1A1SMN1; SMN2POLBCA2TYR | |
| Hydrochloric Acid SCHEMBL5424687 | 0.81 | POLB (0.54) | ALDH1A1SMN1; SMN2POLBCA2TYR | |
| SCHEMBL22124842 | 0.81 | KDM4E (0.45) | ALDH1A1SMN1; SMN2POLBCA2TYR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230051589-A1 | COMPOUNDS AND COMPOSITIONS FOR TREATING CONDITIONS ASSOCIATED WITH NLRP ACTIVITY | NOVARTIS AG (CH) | 2023-02-16 | — | — | US | disclosed |
| US-10654816-B2 | Compounds and compositions for treating conditions associated with NLRP activity | NOVARTIS INFLAMMASOME RESEARCH, INC. (US) | 2020-05-19 | — | — | US | disclosed |
| US-20200087270-A1 | COMPOUNDS AND COMPOSITIONS FOR TREATING CONDITIONS ASSOCIATED WITH NLRP ACTIVITY | NOVARTIS AG (CH) | 2020-03-19 | — | — | US | disclosed |
| US-10042258-B2 | Composition for forming a resist upper-layer film and method for producing a semiconductor device using the composition | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-08-07 | — | — | US | disclosed |
| US-10042258-B2 | Composition for forming a resist upper-layer film and method for producing a semiconductor device using the composition | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-08-07 | — | — | US | disclosed |
| US-9977331-B2 | Resist overlayer film forming composition and method for producing semiconductor device including the same | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-05-22 | — | — | US | disclosed |
| US-9977331-B2 | Resist overlayer film forming composition and method for producing semiconductor device including the same | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-05-22 | — | — | US | disclosed |
| US-9746768-B2 | Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-08-29 | — | — | US | disclosed |
| US-9746768-B2 | Resist overlayer film forming composition for lithography and method for producing semiconductor device using the same | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-08-29 | — | — | US | disclosed |
| US-20170205711-A1 | COMPOSITION FOR FORMING A RESIST UPPER-LAYER FILM AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE COMPOSITION | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-07-20 | — | — | US | disclosed |
| US-9494864-B2 | Resist overlayer film forming composition for lithography and method for manufacturing semiconductor device using the same | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-11-15 | — | — | US | disclosed |
| US-9494864-B2 | Resist overlayer film forming composition for lithography and method for manufacturing semiconductor device using the same | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-11-15 | — | — | US | disclosed |
| US-20150362835-A1 | RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE SAME | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-12-17 | — | — | US | disclosed |
| US-20150362835-A1 | RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE SAME | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-12-17 | — | — | US | disclosed |
| US-20150248057-A1 | RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-09-03 | — | — | US | disclosed |
| US-20150248057-A1 | RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-09-03 | — | — | US | disclosed |
| US-9046768-B2 | Resist overlayer film forming composition for lithography | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-06-02 | — | — | US | disclosed |
| US-9046768-B2 | Resist overlayer film forming composition for lithography | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2015-06-02 | — | — | US | disclosed |
| US-20140255847-A1 | RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-09-11 | — | — | US | disclosed |
| US-20140255847-A1 | RESIST OVERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-09-11 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200087270-A1 | COMPOUNDS AND COMPOSITIONS FOR TREATING CONDITIONS ASSOCIATED WITH NLRP ACTIVITY | NLRP1, NLRP3, NOD1 | ALDH1A1 1972/4885SMN1; SMN2 2608/4885POLB 4644/4885 |
| US-20230051589-A1 | COMPOUNDS AND COMPOSITIONS FOR TREATING CONDITIONS ASSOCIATED WITH NLRP ACTIVITY | NLRP1, NLRP3, NOD1 | ALDH1A1 1999/4885SMN1; SMN2 2744/4885POLB 4639/4885 |
| US-10654816-B2 | Compounds and compositions for treating conditions associated with NLRP activity | NLRP1, NLRP3, NOD1 | ALDH1A1 1972/4885SMN1; SMN2 2608/4885POLB 4644/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.