Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PARL | Q9H300 | 4/20 | 0.59 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.49 |
| ▸ | CTSG | P08311 | 1/20 | 0.42 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.41 |
| ▸ | CA1 | P00915 | 2/20 | 0.41 |
| ▸ | CA2 | P00918 | 2/20 | 0.41 |
| ▸ | FAAH | O00519 | 1/20 | 0.41 |
| ▸ | PRSS1 | P07477 | 1/20 | 0.41 |
| ▸ | PRSS2 | P07478 | 1/20 | 0.41 |
| ▸ | ELANE | P08246 | 1/20 | 0.41 |
| ▸ | PRTN3 | P24158 | 1/20 | 0.41 |
| ▸ | PRSS3 | P35030 | 1/20 | 0.41 |
| ▸ | CA5A | P35218 | 1/20 | 0.41 |
| ▸ | CA9 | Q16790 | 1/20 | 0.41 |
| ▸ | TSHR | P16473 | 2/20 | 0.41 |
| ▸ | HPGD | P15428 | 1/20 | 0.41 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.40 |
| ▸ | POLB | P06746 | 2/20 | 0.40 |
| ▸ | MEN1 | O00255 | 1/20 | 0.40 |
| ▸ | MAPT | P10636 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4829686 | 0.81 | KMT2A (0.50) | PARLKMT2ACTSGCA1CA2 | |
| SCHEMBL4833939 | 0.80 | KMT2A (0.46) | PARLKMT2ACTSGCA1CA2 | |
| SCHEMBL30964011 | 0.79 | MAPT (0.57) | KMT2AFAAHPRSS1PRSS2ELANE | |
| SCHEMBL5552404 | 0.79 | MAPT (0.57) | KMT2AFAAHPRSS1PRSS2ELANE | |
| SCHEMBL8702848 | 0.78 | TSHR (0.44) | PARLKMT2ACTSGFAAHPRSS1 | |
| SCHEMBL28448540 | 0.77 | KMT2A (0.46) | PARLKMT2ACTSGCA1CA2 | |
| SCHEMBL4829782 | 0.76 | KMT2A (0.45) | KMT2ACTSGCA1CA2FAAH | |
| SCHEMBL64964 | 0.74 | PARL (1.00) | PARLKMT2AALOX12HPGDALDH1A1 | |
| SCHEMBL19999237 | 0.72 | ALDH1A1 (0.63) | KMT2ACA1CA2CA9HPGD | |
| SCHEMBL4594148 | 0.71 | KMT2A (0.61) | KMT2ACA1CA2FAAHPRSS1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6569596-B1 | Photoresists comprising N-(ethylsulfonyloxy)succinimide, novolaks, curing agents and an acid generators such as alpha -(hexylsulfonyloxyimino)-4-methoxybenzyl cyanide; integrated circuits; semiconductors | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-05-27 | — | — | US | claimed |
| CN-114729072-B | Curable composition | 三键有限公司 | 2024-07-30 | — | — | CN | disclosed |
| CN-109843935-B | Dispersion liquid | 住友化学株式会社 | 2021-07-27 | — | — | CN | disclosed |
| EP-2138897-B1 | CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN | FUJITSU LTD (JP) | 2016-08-03 | — | — | EP | disclosed |
| US-8795951-B2 | Material for forming resist sensitization film and production method of semiconductor device | FUJITSU LIMITED (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8557144-B2 | Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head | FUJITSU LIMITED (JP) | 2013-10-15 | — | — | US | disclosed |
| US-20110198730-A1 | HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD | LION CORPORATION | 2011-08-18 | — | — | US | disclosed |
| US-20110101503-A1 | HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD | LION CORPORATION (JP) | 2011-05-05 | — | — | US | disclosed |
| US-20110081615-A1 | MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-04-07 | — | — | US | disclosed |
| US-7759045-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-07-20 | — | — | US | disclosed |
| US-20090004601-A1 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-01-01 | — | — | US | disclosed |
| CN-101334588-A | Chemically amplified positive resist composition | SUMITOMO CHEMICAL CO (JP) | 2008-12-31 | — | — | CN | disclosed |
| US-20080160449-A1 | Photoresist polymer having nano-smoothness and etching resistance, and resist composition | LION CORPORATION (JP) | 2008-07-03 | — | — | US | disclosed |
| US-20070148585-A1 | Hyperbranched polymer, production method therefor and resist composition containing hyperbranched polymer | LION CORPORATION. | 2007-06-28 | — | — | US | disclosed |
| CN-1898281-A | Hyperbranched polymer, method for producing same, and resist composition containing same | LION CORP (JP) | 2007-01-17 | — | — | CN | disclosed |
| EP-1698645-A1 | HYPERBRANCHED POLYMER, PROCESS FOR PRODUCING THE SAME AND RESIST COMPOSITION CONTAINING THE HYPERBRANCHED POLYMER | Lion Corporation (JP) | 2006-09-06 | — | — | EP | disclosed |
| US-6893794-B2 | Chemical amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2005-05-17 | — | — | US | disclosed |
| US-20040018445-A1 | Chemical amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2004-01-29 | — | — | US | disclosed |
| US-6569596-B1 | Photoresists comprising N-(ethylsulfonyloxy)succinimide, novolaks, curing agents and an acid generators such as alpha -(hexylsulfonyloxyimino)-4-methoxybenzyl cyanide; integrated circuits; semiconductors | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-05-27 | — | — | US | disclosed |
| EP-0917000-A2 | Positive resist composition and method for forming a resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 1999-05-19 | — | — | EP | disclosed |