Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAOA | P21397 | 2/20 | 0.52 |
| ▸ | MAOB | P27338 | 2/20 | 0.52 |
| ▸ | CYP19A1 | P11511 | 2/20 | 0.50 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.46 |
| ▸ | TSHR | P16473 | 1/20 | 0.46 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.46 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.46 |
| ▸ | SIGMAR1 | Q99720 | 1/20 | 0.44 |
| ▸ | MGLL | Q99685 | 1/20 | 0.43 |
| ▸ | CA2 | P00918 | 3/20 | 0.42 |
| ▸ | CA1 | P00915 | 2/20 | 0.42 |
| ▸ | CA9 | Q16790 | 2/20 | 0.42 |
| ▸ | PRMT1 | Q99873 | 1/20 | 0.41 |
| ▸ | LMNA | P02545 | 2/20 | 0.40 |
| ▸ | GRM2 | Q14416 | 1/20 | 0.40 |
| ▸ | GRM3 | Q14832 | 1/20 | 0.40 |
| ▸ | MAPT | P10636 | 2/20 | 0.39 |
| ▸ | CA12 | O43570 | 1/20 | 0.39 |
| ▸ | CA4 | P22748 | 1/20 | 0.39 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1607459 | 0.95 | MAOB (0.50) | MAOAMAOBCYP19A1ALDH1A1TSHR | |
| SCHEMBL1606798 | 0.93 | MGLL (0.51) | MAOAMAOBCYP19A1ALDH1A1TSHR | |
| SCHEMBL1607003 | 0.93 | MGLL (0.51) | MAOAMAOBCYP19A1ALDH1A1TSHR | |
| SCHEMBL1606350 | 0.93 | MGLL (0.51) | MAOAMAOBCYP19A1ALDH1A1TSHR | |
| SCHEMBL29674870 | 0.89 | MAOA (0.55) | MAOAMAOBCYP19A1ALDH1A1TSHR | |
| SCHEMBL1607251 | 0.89 | MAOA (0.55) | MAOAMAOBCYP19A1ALDH1A1TSHR | |
| SCHEMBL28136847 | 0.82 | MAOA (0.47) | MAOAMAOBCYP19A1ALDH1A1TSHR | |
| SCHEMBL8877206 | 0.81 | HTR3E (0.53) | ALDH1A1SMN1; SMN2 | |
| SCHEMBL15664821 | 0.80 | MAOA (0.49) | MAOAMAOBCYP19A1ALDH1A1TSHR | |
| SCHEMBL7739062 | 0.80 | FFAR1 (0.40) | MAOAMAOBCYP19A1ALDH1A1TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8313892-B2 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2012-11-20 | — | — | US | claimed |
| EP-3851446-A1 | PEPTIDE PURIFICATION METHOD USING SULFONATE COMPOUND | Nagase & Co., Ltd. (JP) | 2021-07-21 | — | — | EP | disclosed |
| EP-2138897-B1 | CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN | FUJITSU LTD (JP) | 2016-08-03 | — | — | EP | disclosed |
| US-8795951-B2 | Material for forming resist sensitization film and production method of semiconductor device | FUJITSU LIMITED (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8557144-B2 | Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head | FUJITSU LIMITED (JP) | 2013-10-15 | — | — | US | disclosed |
| US-8313892-B2 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2012-11-20 | — | — | US | disclosed |
| US-20110081615-A1 | MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-04-07 | — | — | US | disclosed |
| US-20100009296-A1 | MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2138897-A1 | MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | Fujitsu Limited (JP) | 2009-12-30 | — | — | EP | disclosed |
| EP-1612603-A2 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2006-01-04 | — | — | EP | disclosed |
| US-20050277055-A1 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2005-12-15 | — | — | US | disclosed |
| EP-0459255-B1 | Method for suppression of electrification | HITACHI LTD (JP) | 1998-03-18 | — | — | EP | disclosed |
| US-5589270-A | Processed substrate obtained by a process for effecting suppression of electrification | HITACHI, LTD. (JP) | 1996-12-31 | — | — | US | disclosed |
| US-5437893-A | Method for suppression of electrification | HITACHI, LTD (JP) | 1995-08-01 | — | — | US | disclosed |
| US-5256454-A | Method for suppression of electrification | HITACHI, LTD. (JP) | 1993-10-26 | — | — | US | disclosed |
| EP-0459255-A2 | Method for suppression of electrification | HITACHI, LTD. (JP) | 1991-12-04 | — | — | EP | disclosed |