Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PARL | Q9H300 | 2/20 | 0.42 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.33 |
| ▸ | MGLL | Q99685 | 1/20 | 0.30 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4836768 | 0.81 | ALDH1A1 (0.32) | SMN1; SMN2 | |
| SCHEMBL4837362 | 0.78 | — | — | |
| SCHEMBL4835917 | 0.74 | ALDH1A1 (0.49) | SMN1; SMN2 | |
| SCHEMBL11026158 | 0.74 | ALDH1A1 (0.50) | SMN1; SMN2 | |
| SCHEMBL2962095 | 0.73 | PARL (0.39) | PARLL3MBTL1MGLL | |
| SCHEMBL28490487 | 0.72 | PARL (0.36) | PARL | |
| SCHEMBL28411329 | 0.69 | PARL (0.54) | PARLSMN1; SMN2 | |
| SCHEMBL4835568 | 0.69 | CA12 (0.33) | — | |
| SCHEMBL17130619 | 0.67 | ALDH1A1 (0.39) | L3MBTL1SMN1; SMN2 | |
| SCHEMBL4849848 | 0.67 | CA1 (0.39) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6569596-B1 | Photoresists comprising N-(ethylsulfonyloxy)succinimide, novolaks, curing agents and an acid generators such as alpha -(hexylsulfonyloxyimino)-4-methoxybenzyl cyanide; integrated circuits; semiconductors | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-05-27 | — | — | US | claimed |
| JP-10147572-A | — | — | None | — | — | JP | disclosed |
| EP-2138897-B1 | CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN | FUJITSU LTD (JP) | 2016-08-03 | — | — | EP | disclosed |
| US-8795951-B2 | Material for forming resist sensitization film and production method of semiconductor device | FUJITSU LIMITED (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8557144-B2 | Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head | FUJITSU LIMITED (JP) | 2013-10-15 | — | — | US | disclosed |
| US-20110198730-A1 | HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD | LION CORPORATION | 2011-08-18 | — | — | US | disclosed |
| US-20110101503-A1 | HYPERBRANCHED POLYMER SYNTHESIZING METHOD, HYPERBRANCHED POLYMER, RESIST COMPOSITION, SEMICONDUCTOR INTEGRATED CIRCUIT, AND SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION METHOD | LION CORPORATION (JP) | 2011-05-05 | — | — | US | disclosed |
| US-20110081615-A1 | MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-04-07 | — | — | US | disclosed |
| US-20100009296-A1 | MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2138897-A1 | MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | Fujitsu Limited (JP) | 2009-12-30 | — | — | EP | disclosed |
| US-20070148585-A1 | Hyperbranched polymer, production method therefor and resist composition containing hyperbranched polymer | LION CORPORATION. | 2007-06-28 | — | — | US | disclosed |
| CN-1898281-A | Hyperbranched polymer, method for producing same, and resist composition containing same | LION CORP (JP) | 2007-01-17 | — | — | CN | disclosed |
| EP-1698645-A1 | HYPERBRANCHED POLYMER, PROCESS FOR PRODUCING THE SAME AND RESIST COMPOSITION CONTAINING THE HYPERBRANCHED POLYMER | Lion Corporation (JP) | 2006-09-06 | — | — | EP | disclosed |
| US-6893794-B2 | Chemical amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2005-05-17 | — | — | US | disclosed |
| US-20040018445-A1 | Chemical amplification type positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2004-01-29 | — | — | US | disclosed |
| US-6569596-B1 | Photoresists comprising N-(ethylsulfonyloxy)succinimide, novolaks, curing agents and an acid generators such as alpha -(hexylsulfonyloxyimino)-4-methoxybenzyl cyanide; integrated circuits; semiconductors | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-05-27 | — | — | US | disclosed |
| US-6068962-A | NOVOLAK RESIN AS AN ALKALI-SOLUBLE COMPONENT; QUINONEDIAZIDE; ACID GENERATOR; ANTHRACENE DERIVATIVE | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2000-05-30 | — | — | US | disclosed |
| EP-0917000-A2 | Positive resist composition and method for forming a resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 1999-05-19 | — | — | EP | disclosed |
| JP-H10147572-A | SULFONIC ACID ESTER COMPOUND AND ITS APPLICATION | SUMITOMO CHEM CO LTD | 1998-06-02 | — | — | JP | disclosed |
| EP-0831371-A2 | Positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 1998-03-25 | — | — | EP | disclosed |