Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPT | P10636 | 3/20 | 0.44 |
| ▸ | CA12 | O43570 | 2/20 | 0.41 |
| ▸ | CA2 | P00918 | 2/20 | 0.41 |
| ▸ | CA9 | Q16790 | 2/20 | 0.41 |
| ▸ | ADRB2 | P07550 | 1/20 | 0.40 |
| ▸ | ADRB1 | P08588 | 1/20 | 0.40 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.40 |
| ▸ | HTT | P42858 | 1/20 | 0.39 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.39 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.39 |
| ▸ | PGR | P06401 | 1/20 | 0.39 |
| ▸ | NR3C2 | P08235 | 1/20 | 0.39 |
| ▸ | CA1 | P00915 | 1/20 | 0.38 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.37 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.37 |
| ▸ | GMNN | O75496 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.37 |
| ▸ | LMNA | P02545 | 1/20 | 0.37 |
| ▸ | POLB | P06746 | 1/20 | 0.37 |
| ▸ | HPGD | P15428 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL21623893 | 1.00 | MAPT (0.44) | MAPTCA12CA2CA9ADRB2 | |
| SCHEMBL1606115 | 0.83 | MAPT (0.41) | MAPTCA12CA2CA9ADRB2 | |
| SCHEMBL7902799 | 0.81 | MAPT (0.53) | MAPTCA12CA2CA9ADRB2 | |
| SCHEMBL10583790 | 0.79 | CA2 (0.41) | MAPTCA12CA2CA9ADRB2 | |
| SCHEMBL11039953 | 0.79 | MAPT (0.41) | MAPTCA12CA2CA9HTT | |
| SCHEMBL10232576 | 0.79 | MAPT (0.41) | MAPTCA12CA2CA9ADRB2 | |
| SCHEMBL7759858 | 0.78 | CA12 (0.37) | MAPTCA12CA2CA9ADRB2 | |
| SCHEMBL7950616 | 0.76 | MAPT (0.50) | MAPTADRB2ADRB1ADRB3HTT | |
| SCHEMBL11043636 | 0.75 | ALDH1A1 (0.47) | MAPTCA12CA9SMN1; SMN2KEAP1 | |
| SCHEMBL489425 | 0.74 | MAPT (0.47) | MAPTADRB2ADRB1ADRB3HTT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8313892-B2 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2012-11-20 | — | — | US | claimed |
| EP-4107198-B1 | POLYISOCYANATE PREPARATIONS | COVESTRO DEUTSCHLAND AG (DE) | 2024-03-13 | — | — | EP | disclosed |
| EP-3560975-B2 | IONICALLY HYDROPHILIZED POLYISOCYANATES AND ANTIOXIDANTS | COVESTRO INTELLECTUAL PROPERTY GMBH & CO KG (DE) | 2023-12-06 | — | — | EP | disclosed |
| EP-3724251-B2 | IONICALLY HYDROPHILIZED POLYISOCYANATES, WATER CONTENT | COVESTRO INTELLECTUAL PROPERTY GMBH & CO KG (DE) | 2023-11-22 | — | — | EP | disclosed |
| EP-3851472-B1 | IONICALLY HYDROPHILIZED POLYISOCYANATES, WATER CONTENT | COVESTRO INTELLECTUAL PROPERTY GMBH & CO KG (DE) | 2023-06-07 | — | — | EP | disclosed |
| US-20230080775-A1 | POLYISOCYANATE PREPARATIONS | COVESTRO DEUTSCHLAND AG (DE) | 2023-03-16 | — | — | US | disclosed |
| EP-4107198-A1 | POLYISOCYANATE PREPARATIONS | Covestro Deutschland AG (DE) | 2022-12-28 | — | — | EP | disclosed |
| CN-110396165-B | Ionically hydrophilicized polyisocyanates and antioxidants | 科思创德国股份有限公司 | 2022-12-06 | — | — | CN | disclosed |
| CN-112041369-B | Ionically hydrophilicized polyisocyanates, water content | 科思创知识产权两合公司 | 2022-11-29 | — | — | CN | disclosed |
| CN-115066445-A | Polyisocyanate formulations | 科思创德国股份有限公司 | 2022-09-16 | — | — | CN | disclosed |
| US-20110081615-A1 | MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-04-07 | — | — | US | disclosed |
| US-20100009296-A1 | MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2138897-A1 | MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | Fujitsu Limited (JP) | 2009-12-30 | — | — | EP | disclosed |
| EP-1612603-A2 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2006-01-04 | — | — | EP | disclosed |
| US-20050277055-A1 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2005-12-15 | — | — | US | disclosed |
| EP-0459255-B1 | Method for suppression of electrification | HITACHI LTD (JP) | 1998-03-18 | — | — | EP | disclosed |
| US-5589270-A | Processed substrate obtained by a process for effecting suppression of electrification | HITACHI, LTD. (JP) | 1996-12-31 | — | — | US | disclosed |
| US-5437893-A | Method for suppression of electrification | HITACHI, LTD (JP) | 1995-08-01 | — | — | US | disclosed |
| US-5256454-A | Method for suppression of electrification | HITACHI, LTD. (JP) | 1993-10-26 | — | — | US | disclosed |
| EP-0459255-A2 | Method for suppression of electrification | HITACHI, LTD. (JP) | 1991-12-04 | — | — | EP | disclosed |