SCHEMBL1606115

SCHEMBL1606115

CC(CCS(=O)(=O)O)CNc1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 3/20 0.41
CA12 O43570 2/20 0.39
CA2 P00918 2/20 0.39
CA9 Q16790 2/20 0.39
ADRB2 P07550 1/20 0.38
ADRB1 P08588 1/20 0.38
ADRB3 P13945 1/20 0.38
NR3C1 P04150 1/20 0.37
PGR P06401 1/20 0.37
NR3C2 P08235 1/20 0.37
SMN1; SMN2 Q16637 3/20 0.37
HTT P42858 1/20 0.37
CA1 P00915 1/20 0.36
NPC1 O15118 1/20 0.36
RAB9A P51151 1/20 0.36
BCHE P06276 1/20 0.35
KEAP1 Q14145 1/20 0.35
KDM4E B2RXH2 1/20 0.35
GMNN O75496 1/20 0.35
ALDH1A1 P00352 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21623893 0.83 MAPT (0.44) MAPTCA12CA2CA9ADRB2
SCHEMBL1608190 0.83 MAPT (0.44) MAPTCA12CA2CA9ADRB2
SCHEMBL10078834 0.77 MAPT (0.46) MAPTADRB2ADRB1ADRB3SMN1; SMN2
SCHEMBL21623905 0.77 ALDH1A1 (0.45) MAPTCA12CA9SMN1; SMN2NPC1
SCHEMBL7033812 0.77 ALDH1A1 (0.45) MAPTCA12CA9SMN1; SMN2NPC1
SCHEMBL9572777 0.75 MAPT (0.44) MAPTADRB2ADRB1ADRB3SMN1; SMN2
SCHEMBL9572583 0.74 MAPT (0.43) MAPTADRB2ADRB1ADRB3SMN1; SMN2
SCHEMBL1608002 0.73 ALDH1A1 (0.52) MAPTCA12CA2CA9SMN1; SMN2
SCHEMBL7950616 0.73 MAPT (0.50) MAPTADRB2ADRB1ADRB3SMN1; SMN2
SCHEMBL22392990 0.73 L3MBTL1 (0.50) MAPTSMN1; SMN2HTTNPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8313892-B2 Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device FUJITSU LIMITED (JP) 2012-11-20 US claimed
EP-2138897-B1 CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN FUJITSU LTD (JP) 2016-08-03 EP disclosed
US-8795951-B2 Material for forming resist sensitization film and production method of semiconductor device FUJITSU LIMITED (JP) 2014-08-05 US disclosed
US-8557144-B2 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head FUJITSU LIMITED (JP) 2013-10-15 US disclosed
US-8313892-B2 Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device FUJITSU LIMITED (JP) 2012-11-20 US disclosed
US-20110081615-A1 MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-04-07 US disclosed
US-20100009296-A1 MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2138897-A1 MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD Fujitsu Limited (JP) 2009-12-30 EP disclosed
EP-1612603-A2 Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device FUJITSU LIMITED (JP) 2006-01-04 EP disclosed
US-20050277055-A1 Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device FUJITSU LIMITED (JP) 2005-12-15 US disclosed
EP-0459255-B1 Method for suppression of electrification HITACHI LTD (JP) 1998-03-18 EP disclosed
US-5589270-A Processed substrate obtained by a process for effecting suppression of electrification HITACHI, LTD. (JP) 1996-12-31 US disclosed
US-5437893-A Method for suppression of electrification HITACHI, LTD (JP) 1995-08-01 US disclosed
US-5256454-A Method for suppression of electrification HITACHI, LTD. (JP) 1993-10-26 US disclosed
EP-0459255-A2 Method for suppression of electrification HITACHI, LTD. (JP) 1991-12-04 EP disclosed