Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PDIA6 | Q15084 | 1/20 | 0.49 |
| ▸ | CA12 | O43570 | 4/20 | 0.49 |
| ▸ | CA1 | P00915 | 4/20 | 0.49 |
| ▸ | CA2 | P00918 | 4/20 | 0.49 |
| ▸ | CA9 | Q16790 | 4/20 | 0.49 |
| ▸ | CA7 | P43166 | 3/20 | 0.49 |
| ▸ | TSHR | P16473 | 2/20 | 0.49 |
| ▸ | CTDSP1 | Q9GZU7 | 1/20 | 0.47 |
| ▸ | MAPT | P10636 | 2/20 | 0.46 |
| ▸ | NPC1 | O15118 | 2/20 | 0.46 |
| ▸ | RAB9A | P51151 | 2/20 | 0.46 |
| ▸ | MEN1 | O00255 | 1/20 | 0.46 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.46 |
| ▸ | GAA | P10253 | 1/20 | 0.46 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.46 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.46 |
| ▸ | S1PR1 | P21453 | 1/20 | 0.42 |
| ▸ | THRA | P10827 | 1/20 | 0.41 |
| ▸ | THRB | P10828 | 1/20 | 0.41 |
| ▸ | LMNA | P02545 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3444883 | 0.96 | TSHR (0.50) | PDIA6CA12CA1CA2CA9 | |
| SCHEMBL1607556 | 0.96 | TSHR (0.50) | PDIA6CA12CA1CA2CA9 | |
| SCHEMBL5671525 | 0.96 | TSHR (0.50) | PDIA6CA12CA1CA2CA9 | |
| SCHEMBL1608214 | 0.96 | TSHR (0.50) | PDIA6CA12CA1CA2CA9 | |
| SCHEMBL1607721 | 0.94 | MAPT (0.52) | PDIA6CA12CA1CA2CA9 | |
| SCHEMBL20597466 | 0.88 | CTDSP1 (0.57) | PDIA6CA12CA1CA2CA9 | |
| SCHEMBL1606269 | 0.87 | CTDSP1 (0.59) | PDIA6CA12CA1CA2CA9 | |
| SCHEMBL4535304 | 0.83 | PDIA6 (0.62) | PDIA6CA12CA1CA2CA9 | |
| SCHEMBL8086533 | 0.81 | ALDH1A1 (0.41) | PDIA6CA12CA1CA2CA9 | |
| SCHEMBL11050888 | 0.81 | CTDSP1 (0.57) | PDIA6CA12CA1CA2CA9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8313892-B2 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2012-11-20 | — | — | US | claimed |
| EP-2138897-B1 | CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN | FUJITSU LTD (JP) | 2016-08-03 | — | — | EP | disclosed |
| US-8795951-B2 | Material for forming resist sensitization film and production method of semiconductor device | FUJITSU LIMITED (JP) | 2014-08-05 | — | — | US | disclosed |
| US-8557144-B2 | Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head | FUJITSU LIMITED (JP) | 2013-10-15 | — | — | US | disclosed |
| US-8313892-B2 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2012-11-20 | — | — | US | disclosed |
| US-20110081615-A1 | MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-04-07 | — | — | US | disclosed |
| US-20100009296-A1 | MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2138897-A1 | MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD | Fujitsu Limited (JP) | 2009-12-30 | — | — | EP | disclosed |
| EP-1612603-A2 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2006-01-04 | — | — | EP | disclosed |
| US-20050277055-A1 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2005-12-15 | — | — | US | disclosed |
| EP-0662694-B1 | Soluble aniline conducting polymers | MITSUBISHI RAYON CO (JP) | 2002-02-27 | — | — | EP | disclosed |
| US-5932144-A | ALKOXY GROUP SUBSTITUTED AMINOBENZENESULFONIC ACID, OR SALT THEREOF | MITSUBISHI RAYON CO., LTD. (JP) | 1999-08-03 | — | — | US | disclosed |
| US-5700399-A | Soluble alkoxy-group substituted aminobenzenesulfonic acid aniline conducting polymers | NITTO CHEMICAL INDUSTRY CO., LTD. (JP) | 1997-12-23 | — | — | US | disclosed |
| US-5589108-A | Soluble alkoxy-group substituted aminobenzenesulfonic acid aniline conducting polymers | NITTO CHEMICAL INDUSTRY CO., LTD. (JP) | 1996-12-31 | — | — | US | disclosed |
| EP-0662694-A2 | Soluble aniline conducting polymers | NITTO CHEMICAL INDUSTRY CO., LTD. (JP) | 1995-07-12 | — | — | EP | disclosed |