SCHEMBL1609062

SCHEMBL1609062

CCCC[Si](CCCC)(OC)OCC

nearest known ligand 0.32

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8851750 0.95 LMNA (0.31) LMNA
SCHEMBL19816659 0.93 LMNA (0.35) LMNA
SCHEMBL17216628 0.91
SCHEMBL8852278 0.91 LMNA (0.31) LMNA
SCHEMBL19816716 0.91 LMNA (0.38) LMNA
SCHEMBL28092306 0.91 LMNA (0.31) LMNA
SCHEMBL104154 0.87 TSHR (0.33) LMNA
SCHEMBL28112362 0.86 OPRM1 (0.30)
SCHEMBL705834 0.84 TSHR (0.32) LMNA
SCHEMBL702382 0.84 TSHR (0.32) LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 155 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11059920-B2 Process for producing high cis-1,4-polydiene with lanthanide-based catalyst compositions BRIDGESTONE CORPORATION (JP) 2021-07-13 US claimed
US-20190169330-A1 Process For Producing High Cis-1,4-Polydiene With Lanthanide-Based Catalyst Compositions BRIDGESTONE CORPORATION (JP) 2019-06-06 US claimed
EP-3491030-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS Bridgestone Corporation (JP) 2019-06-05 EP claimed
CN-109715680-A The method for preparing high-cis -1,4- polydiene with the carbon monoxide-olefin polymeric based on lanthanide series 株式会社普利司通 2019-05-03 CN claimed
WO-2018022994-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS BRIDGESTONE CORPORATION (JP) 2018-02-01 WO claimed
CN-116075368-B Resin composition, cured product, method for producing same, and laminate 三菱化学株式会社 2024-06-11 CN disclosed
US-11912889-B2 Silicon-containing polymer, film-forming composition, method for forming silicon-containing polymer coating, method for forming silica coating, and production method for silicon-containing polymer TOKYO OHKA KOGYO CO., LTD. (JP) 2024-02-27 US disclosed
US-20230257503-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE MITSUBISHI CHEMICAL CORPORATION (JP) 2023-08-17 US disclosed
EP-4212256-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE Mitsubishi Chemical Corporation (JP) 2023-07-19 EP disclosed
CN-116075368-A Resin composition, cured product, method for producing same, and laminate 三菱化学株式会社 2023-05-05 CN disclosed
US-11542397-B2 Liquid composition, quantum dot-containing film, optical film, light-emitting display element panel, and light-emitting display device TOKYO OHKA KOGYO CO., LTD. (JP) 2023-01-03 US disclosed
US-11413682-B2 Method for producing surface-modified metal oxide fine particle, method for producing improved metal oxide fine particles, surface-modified metal oxide fine particles, and metal oxide fine particle dispersion liquid TOKYO OHKA KOGYO CO., LTD. (JP) 2022-08-16 US disclosed
US-20070298349-A1 Antireflective Coating Compositions Comprising Siloxane Polymer AZ ELECTRONIC MATERIALS USA CORP. 2007-12-27 US disclosed
CN-101010635-A Composition for forming antireflective film and wiring forming method using same TOKYO OHKA KOGYO CO LTD (JP) 2007-08-01 CN disclosed
CN-1754930-A Coating fluid for forming silicon dioxide capsule TOKYO OHKA KOGYO CO LTD (JP) 2006-04-05 CN disclosed
US-20050112383-A1 Undercoating layer material for lithography and wiring forming method using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2005-05-26 US disclosed
US-20040121937-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2004-06-24 US disclosed
CN-1495535-A Etching solution for forming bimetallic mosaic structure craft and base phate treatment method ͬ�Ϳ�ҵ��ʽ���� 2004-05-12 CN disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 US disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 US disclosed