SCHEMBL702382

SCHEMBL702382

CCCC[Si](CC[Si](CCCC)(OCC)OCC)(OCC)OCC

nearest known ligand 0.32

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.32
LMNA P02545 1/20 0.32
THRB P10828 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL104154 0.97 TSHR (0.33) TSHRLMNATHRB
SCHEMBL705834 0.94 TSHR (0.32) TSHRLMNATHRB
SCHEMBL707549 0.94 TSHR (0.32) TSHRLMNATHRB
SCHEMBL1607992 0.92 LMNA (0.30) TSHRLMNA
SCHEMBL27313984 0.92 TSHR (0.35) TSHRLMNATHRB
SCHEMBL28188887 0.90 TSHR (0.40) TSHRLMNATHRB
SCHEMBL28726833 0.90 TSHR (0.40) TSHRLMNATHRB
SCHEMBL329219 0.89 TSHR (0.37) TSHRLMNATHRB
SCHEMBL17937869 0.87 DNM1 (0.42) TSHR
SCHEMBL1609596 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
EP-2163664-A1 Method for depositing si-containing film, insulator film, and semiconductor device Shin-Etsu Chemical Co., Ltd. (JP) 2010-03-17 EP disclosed
US-20100061915-A1 METHOD FOR DEPOSITING SI-CONTAINING FILM, INSULATOR FILM, AND SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-11 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed