SCHEMBL1609541

SCHEMBL1609541

CC[Si](C)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 5/20 0.40
CA4 P22748 1/20 0.40
TSHR P16473 1/20 0.38
KCNA3 P22001 1/20 0.37
CHRNB2 P17787 2/20 0.36
CHRNB4 P30926 2/20 0.36
CHRNA3 P32297 2/20 0.36
CHRNA7 P36544 2/20 0.36
CHRNA4 P43681 2/20 0.36
L3MBTL1 Q9Y468 1/20 0.35
TP53 P04637 2/20 0.35
KDM4E B2RXH2 1/20 0.35
NPC1 O15118 1/20 0.35
ALDH1A1 P00352 1/20 0.35
HPGD P15428 1/20 0.35
RAB9A P51151 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
KCNH2 Q12809 1/20 0.34
LMNA P02545 1/20 0.34
HTR1D P28221 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19816477 0.89 CA4 (0.41) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL19816766 0.87 LTA4H (0.39) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL705837 0.83 CA4 (0.42) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL704601 0.83 CA4 (0.42) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL1596973 0.82 LTA4H (0.39) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL10570052 0.81 LTA4H (0.40) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL19816761 0.81 LTA4H (0.40) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL977952 0.80 KCNA3 (0.46) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL704371 0.79 KCNA3 (0.41) LTA4HCA4TSHRKCNA3L3MBTL1
SCHEMBL705384 0.79 KCNA3 (0.41) LTA4HCA4TSHRKCNA3L3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 132 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11059920-B2 Process for producing high cis-1,4-polydiene with lanthanide-based catalyst compositions BRIDGESTONE CORPORATION (JP) 2021-07-13 US claimed
US-20190169330-A1 Process For Producing High Cis-1,4-Polydiene With Lanthanide-Based Catalyst Compositions BRIDGESTONE CORPORATION (JP) 2019-06-06 US claimed
EP-3491030-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS Bridgestone Corporation (JP) 2019-06-05 EP claimed
WO-2018022994-A1 PROCESS FOR PRODUCING HIGH CIS-1,4-POLYDIENE WITH LANTHANIDE-BASED CATALYST COMPOSITIONS BRIDGESTONE CORPORATION (JP) 2018-02-01 WO claimed
CN-116075368-B Resin composition, cured product, method for producing same, and laminate 三菱化学株式会社 2024-06-11 CN disclosed
CN-115926169-B Method for producing polysiloxane compound, composition, and molded article 三菱瓦斯化学株式会社 2024-03-22 CN disclosed
US-11912889-B2 Silicon-containing polymer, film-forming composition, method for forming silicon-containing polymer coating, method for forming silica coating, and production method for silicon-containing polymer TOKYO OHKA KOGYO CO., LTD. (JP) 2024-02-27 US disclosed
US-20230357511-A1 PRODUCTION METHOD FOR POLYSILOXANE, COMPOSITION INCLUDING POLYSILOXANE, AND MOLDED BODY MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-11-09 US disclosed
US-20230331925-A1 THERMOPLASTIC RESIN, COMPOSITION, MOLDED ARTICLE, OPTICAL LENS, AND METHOD FOR PRODUCING THERMOPLASTIC RESIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-10-19 US disclosed
WO-2023171578-A1 THERMOPLASTIC RESIN, METHOD FOR PRODUCING SAME, THERMOPLASTIC RESIN COMPOSITION AND MOLDED BODY 三菱瓦斯化学株式会社 2023-09-14 WO disclosed
US-20230257503-A1 RESIN COMPOSITION, CURED PRODUCT AND MANUFACTURING METHOD THEREFOR, AND LAMINATE MITSUBISHI CHEMICAL CORPORATION (JP) 2023-08-17 US disclosed
EP-4219589-A1 THERMOPLASTIC RESIN, COMPOSITION, MOLDED ARTICLE, OPTICAL LENS, AND METHOD FOR PRODUCING THERMOPLASTIC RESIN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-08-02 EP disclosed
US-20050112383-A1 Undercoating layer material for lithography and wiring forming method using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2005-05-26 US disclosed
US-20050074695-A1 Undercoating material for wiring, embedded material, and wiring formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2005-04-07 US disclosed
WO-2004113486-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-29 WO disclosed
US-20040259761-A1 Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO., LTD. INTEL CORPORATION 2004-12-23 US disclosed
US-20040121937-A1 Cleaning liquid used in process for forming dual damascene structure and a process for treating substrate therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2004-06-24 US disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 US disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 US disclosed
US-4831091-A USING A COORDINATION CATALYST CONTAINING A SILANETRIOL OR -DIOL AS WELL AS AN AROMATIC ESTSER; ODORLESS; STEREOSPECIFIC; PARTICLE SIZES CHISSO CORPORATION (JP) 1989-05-16 US disclosed