SCHEMBL704371

SCHEMBL704371

C[Si](CCC[Si](C)(Oc1ccccc1)Oc1ccccc1)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNA3 P22001 1/20 0.41
CA4 P22748 1/20 0.39
LTA4H P09960 5/20 0.36
HTR1B P28222 2/20 0.36
TSHR P16473 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.35
RECQL P46063 1/20 0.33
HDAC3 O15379 1/20 0.33
HDAC4 P56524 1/20 0.33
HDAC1 Q13547 1/20 0.33
HDAC7 Q8WUI4 1/20 0.33
HDAC2 Q92769 1/20 0.33
HDAC10 Q969S8 1/20 0.33
HDAC11 Q96DB2 1/20 0.33
HDAC8 Q9BY41 1/20 0.33
HDAC6 Q9UBN7 1/20 0.33
HDAC9 Q9UKV0 1/20 0.33
HDAC5 Q9UQL6 1/20 0.33
KCNH2 Q12809 1/20 0.33
DRD2 P14416 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705384 0.95 KCNA3 (0.41) KCNA3CA4LTA4HHTR1BTSHR
SCHEMBL705837 0.91 CA4 (0.42) KCNA3CA4LTA4HHTR1BTSHR
SCHEMBL1608982 0.90 LTA4H (0.46) KCNA3LTA4HTSHRRECQLKCNH2
SCHEMBL3917624 0.88 KCNA3 (0.35) KCNA3CA4LTA4HHTR1BTSHR
SCHEMBL3815414 0.88 TAAR1 (0.41) KCNA3LTA4HKCNH2
SCHEMBL3923262 0.88 KCNA3 (0.40) KCNA3CA4LTA4HHTR1BTSHR
SCHEMBL3350911 0.88 HDAC3 (0.46) KCNA3CA4LTA4HHTR1BTSHR
SCHEMBL13089613 0.87 KCNA3 (0.32) KCNA3CA4LTA4HHTR1B
SCHEMBL7561605 0.86 LTA4H (0.44) LTA4HTSHRKCNH2DRD2DRD3
SCHEMBL13089423 0.84 CA4 (0.37) KCNA3CA4LTA4HHTR1BTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed