SCHEMBL705837

SCHEMBL705837

C[Si](CC[Si](C)(Oc1ccccc1)Oc1ccccc1)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.42
LTA4H P09960 4/20 0.39
TSHR P16473 1/20 0.39
KCNA3 P22001 1/20 0.39
HTR1B P28222 2/20 0.35
KCNH2 Q12809 1/20 0.35
LMNA P02545 1/20 0.35
HTR1D P28221 1/20 0.35
TAAR1 Q96RJ0 1/20 0.34
ALDH1A1 P00352 1/20 0.34
RECQL P46063 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
MTNR1A P48039 1/20 0.34
MTNR1B P49286 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.33
CHRNB2 P17787 1/20 0.33
CHRNB4 P30926 1/20 0.33
CHRNA3 P32297 1/20 0.33
CHRNA7 P36544 1/20 0.33
CHRNA4 P43681 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13089423 0.93 CA4 (0.37) CA4LTA4HTSHRKCNA3HTR1B
SCHEMBL704371 0.91 KCNA3 (0.41) CA4LTA4HTSHRKCNA3HTR1B
SCHEMBL705384 0.91 KCNA3 (0.41) CA4LTA4HTSHRKCNA3HTR1B
SCHEMBL1596973 0.89 LTA4H (0.39) CA4LTA4HTSHRKCNA3KCNH2
SCHEMBL14191179 0.87 HDAC3 (0.39) CA4LTA4HTSHRKCNA3HTR1B
SCHEMBL13089448 0.86 LMNA (0.36) CA4LTA4HTSHRKCNA3LMNA
SCHEMBL704601 0.85 CA4 (0.42) CA4LTA4HTSHRKCNA3HTR1B
SCHEMBL1608982 0.85 LTA4H (0.46) LTA4HTSHRKCNA3KCNH2LMNA
SCHEMBL14191183 0.85 CA4 (0.34) CA4LTA4HTSHRKCNA3HTR1B
SCHEMBL3350911 0.83 HDAC3 (0.46) CA4LTA4HTSHRKCNA3HTR1B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed