SCHEMBL16154019

SCHEMBL16154019

[SiH3]CCCCC[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6447689 1.00
SCHEMBL14645640 1.00
SCHEMBL2567991 1.00
SCHEMBL16793282 1.00
SCHEMBL9233111 1.00
SCHEMBL3804333 0.94
SCHEMBL707236 0.94
SCHEMBL400341 0.80
SCHEMBL25173757 0.78 TSHR (0.44)
SCHEMBL15965319 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12624248-B2 Curable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane L'AIR LIQUIDE, SOCIETÉ ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCÉDÉS GEORGES CLAUDE (FR) 2026-05-12 US claimed
CN-115038741-B Curable formulations for forming low k dielectric silicon-containing films using polycarbosilazanes 乔治洛德方法研究和开发液化空气有限公司 2024-04-02 CN claimed
US-20230095074-A1 CURABLE FORMULATIONS FOR FORMING LOW-k DIELECTRIC SILICON-CONTAINING FILMS USING POLYCARBOSILAZANE AIR LIQUIDE (FR) 2023-03-30 US claimed
US-11499014-B2 Cureable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) 2022-11-15 US claimed
EP-4085091-A1 CURABLE FORMULATIONS FOR FORMING LOW-K DIELECTRIC SILICON-CONTAINING FILMS USING POLYCARBOSILAZANE L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2022-11-09 EP claimed
CN-115038741-A Curable formulations for forming low-k dielectric silicon-containing films using polycarbosilazanes 乔治洛德方法研究和开发液化空气有限公司 2022-09-09 CN claimed
US-12624248-B2 Curable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane L'AIR LIQUIDE, SOCIETÉ ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCÉDÉS GEORGES CLAUDE (FR) 2026-05-12 US disclosed
CN-115038741-B Curable formulations for forming low k dielectric silicon-containing films using polycarbosilazanes 乔治洛德方法研究和开发液化空气有限公司 2024-04-02 CN disclosed
US-20230095074-A1 CURABLE FORMULATIONS FOR FORMING LOW-k DIELECTRIC SILICON-CONTAINING FILMS USING POLYCARBOSILAZANE AIR LIQUIDE (FR) 2023-03-30 US disclosed
US-11499014-B2 Cureable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) 2022-11-15 US disclosed
EP-4085091-A1 CURABLE FORMULATIONS FOR FORMING LOW-K DIELECTRIC SILICON-CONTAINING FILMS USING POLYCARBOSILAZANE L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2022-11-09 EP disclosed
US-20210198429-A1 CUREABLE FORMULATIONS FOR FORMING LOW-k DIELECTRIC SILICON-CONTAINING FILMS USING POLYCARBOSILAZANE AMERICAN AIR LIQUIDE, INC. 2021-07-01 US disclosed
CN-108695255-A Manufacture the method and IC apparatus of IC apparatus 三星电子株式会社 2018-10-23 CN disclosed
US-9343293-B2 Flowable silicon—carbon—oxygen layers for semiconductor processing APPLIED MATERIALS, INC. (US) 2016-05-17 US disclosed
US-20140302688-A1 FLOWABLE SILICON-CARBON-OXYGEN LAYERS FOR SEMICONDUCTOR PROCESSING APPLIED MATERIALS, INC. (US) 2014-10-09 US disclosed