SCHEMBL707236

SCHEMBL707236

[SiH3]CCCC[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27755156 0.94
SCHEMBL16154019 0.94
SCHEMBL2567991 0.94
SCHEMBL9233111 0.94
SCHEMBL16793282 0.94
SCHEMBL14645640 0.94
SCHEMBL6447689 0.94
SCHEMBL3804333 0.88
SCHEMBL400341 0.86
SCHEMBL3790531 0.76

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8765233-B2 Method for forming low-carbon CVD film for filling trenches ASM JAPAN K.K. (JP) 2014-07-01 US claimed
US-20100143609-A1 METHOD FOR FORMING LOW-CARBON CVD FILM FOR FILLING TRENCHES ASM JAPAN K.K. (JP) 2010-06-10 US claimed
JP-6256526-A None JP disclosed
CN-115917712-A Substrate processing apparatus, method for manufacturing semiconductor device, and plasma generating apparatus 株式会社国际电气 2023-04-04 CN disclosed
CN-115810542-A Substrate processing method, method for manufacturing semiconductor device, substrate processing apparatus, and program 株式会社国际电气 2023-03-17 CN disclosed
US-20230079925-A1 METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING SYSTEM, AND RECORDING MEDIUM Kokusai Electric Corporation (JP) 2023-03-16 US disclosed
CN-113518834-A Compositions for silicon-containing films and methods of use thereof 弗萨姆材料美国有限责任公司 2021-10-19 CN disclosed
CN-113243042-A Method for manufacturing semiconductor device, substrate processing apparatus, and program 株式会社国际电气 2021-08-10 CN disclosed
CN-113169069-A Method for manufacturing semiconductor device, substrate processing apparatus, and program 株式会社国际电气 2021-07-23 CN disclosed
US-9905413-B2 Method of manufacturing semiconductor device HITACHI KOKUSAI ELECTRIC, INC. (JP) 2018-02-27 US disclosed
US-20170178889-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HITACHI KOKUSAI ELECTRIC INC. (JP) 2017-06-22 US disclosed
WO-2008140762-A2 COMPOSITION CONTAINING ANTI-MISTING COMPONENT OF REDUCED MOLECULAR WEIGHT AND VISCOSITY MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2008-11-20 WO disclosed
US-20080276836-A1 Composition containing anti-misting component of reduced molecular weight and viscosity MOMENTIVE PERFORMANCE MATERIALS INC. 2008-11-13 US disclosed
US-20080281055-A1 Branched polysiloxane of reduced molecular weight and viscosity MOMENTIVE PERFORMANCE MATERIALS INC. 2008-11-13 US disclosed
WO-2008027497-A2 BRANCHED POLYSILOXANE COMPOSITION MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2008-03-06 WO disclosed
US-20080058479-A1 Composition containing anti-misting component GENERAL ELECTRIC COMPANY (US) 2008-03-06 US disclosed
US-20080058491-A1 Branched polysiloxane composition GENERAL ELECTRIC COMPANY (US) 2008-03-06 US disclosed
WO-2008027494-A2 COMPOSITION CONTAINING ANTI-MISTING COMPONENT MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2008-03-06 WO disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
JP-H06256526-A ORGANIC POLYMER CONTAINING SILICON IN MAIN CHAIN AND ITS PRODUCTION AGENCY OF IND SCIENCE & TECHNOL 1994-09-13 JP disclosed