Methane

Methane

SCHEMBL1615574

C.F.F

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Methane SCHEMBL93251 1.00
Methane SCHEMBL722104 1.00
Methane SCHEMBL93252 1.00
Methane SCHEMBL7898899 1.00
Methane SCHEMBL21055958 1.00
Methane SCHEMBL23493562 1.00
Methane SCHEMBL664518 1.00
Methane SCHEMBL1305482 1.00
Methane SCHEMBL3024503 1.00
Methane SCHEMBL8009844 1.00

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 135 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116805631-A Display device, method of manufacturing the same, and tiled display device including the same 三星显示有限公司 2023-09-26 CN claimed
CN-116564929-A Semiconductor structure and forming method thereof 中芯国际集成电路制造(上海)有限公司 2023-08-08 CN claimed
US-10692729-B2 Etching process method TOKYO ELECTRON LIMITED (JP) 2020-06-23 US claimed
CN-108640980-A Protein assembly and preparation method thereof 中国科学院理化技术研究所 2018-10-12 CN claimed
CN-108531009-A A kind of valve plate resistant hydrophobic coating material of insulating powder in use and preparation method thereof 江苏江南绝缘粉末有限公司 2018-09-14 CN claimed
CN-108075176-A Fluoride ion battery and its manufacturing method 丰田自动车株式会社 2018-05-25 CN claimed
CN-108075177-A Fluoride ion battery and its manufacturing method 丰田自动车株式会社 2018-05-25 CN claimed
US-20170372916-A1 ETCHING PROCESS METHOD TOKYO ELECTRON LIMITED (JP) 2017-12-28 US claimed
US-8003487-B2 Methods of manufacturing a semiconductor device using a layer suspended across a trench SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-08-23 US claimed
US-20090162989-A1 METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING A LAYER SUSPENDED ACROSS A TRENCH SAMSUNG ELECTRONICS CO. LTD. 2009-06-25 US claimed
EP-0002829-B1 MEANS FOR THE CONVERSION INTO ENERGY OF THE VARYING CONDITIONS OF TEMPERATURE EXISTANT IN DEEP WATERS, PARTICULARLY THE SEA Egerer, Paul K. (AT) 1982-10-13 EP claimed
US-4281514-A Apparatus for the production of energy and method for utilizing the pressure and/or temperature conditions in deep waters EGERER PAUL K 1981-08-04 US claimed
JP-8293484-A None JP disclosed
JP-61158143-A None JP disclosed
JP-63099535-A None JP disclosed
JP-11135624-A None JP disclosed
US-4892800-A STABILITY, HIGH SPEED, GROUP 3 AND/OR GROUP 5 ELEMENT CANON KABUSHIKI KAISHA (JP) 1990-01-09 US disclosed
JP-S6399535-A MANUFACTURE OF SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC IND CO LTD 1988-04-30 JP disclosed
JP-S61158143-A ETCHING METHOD FOR INSULATING FILM FUJITSU LTD 1986-07-17 JP disclosed
US-4281514-A Apparatus for the production of energy and method for utilizing the pressure and/or temperature conditions in deep waters EGERER PAUL K 1981-08-04 US disclosed