Methane

Methane

SCHEMBL93251

C.C.C.C.F.F.F.F

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Methane SCHEMBL722104 1.00
Methane SCHEMBL1615574 1.00
Methane SCHEMBL93252 1.00
Methane SCHEMBL7898899 1.00
Methane SCHEMBL21055958 1.00
Methane SCHEMBL23493562 1.00
Methane SCHEMBL664518 1.00
Methane SCHEMBL1305482 1.00
Methane SCHEMBL3024503 1.00
Methane SCHEMBL8009844 1.00

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 670 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260124578-A1 METHOD FOR PRODUCING HYDROGEN FLUORIDE ADSORBENT RESONAC CORPORATION (JP) 2026-05-07 US claimed
EP-4585303-A1 METHOD FOR PRODUCING HYDROGEN FLUORIDE ADSORBENT Resonac Corporation (JP) 2025-07-16 EP claimed
US-12106817-B2 Method for manufacturing a memory CHANGXIN MEMORY TECHNOLOGIES, INC. (CN) 2024-10-01 US claimed
EP-4092741-B1 MEMORY MANUFACTURING METHOD AND MEMORY CHANGXIN MEMORY TECH INC (CN) 2024-02-14 EP claimed
EP-4092741-A1 MEMORY MANUFACTURING METHOD AND MEMORY Changxin Memory Technologies, Inc. (CN) 2022-11-23 EP claimed
US-20220319555-A1 METHOD FOR MANUFACTURING A MEMORY CHANGXIN MEMORY TECHNOLOGIES, INC. (CN) 2022-10-06 US claimed
US-20210291408-A1 METHOD OF MANUFACTURING TEMPLATE AND METHOD OF FORMING PATTERN KIOXIA CORPORATION (JP) 2021-09-23 US claimed
US-20210217853-A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE SUMITOMO ELECTRIC INDUSTRIES, LTD. (JP) 2021-07-15 US claimed
US-9506154-B2 Plasma processing method HITACHI HIGH-TECHNOLOGIES CORPORATION (JP) 2016-11-29 US claimed
US-20160138170-A1 PLASMA PROCESSING METHOD HITACHI HIGH-TECH CORPORATION (JP) 2016-05-19 US claimed
CN-102992258-A Integrated circuit and method of manufacturing the same UNITED MICROELECTRONICS CORP 2013-03-27 CN claimed
EP-2551893-A1 IRREGULAR-SURFACE FORMING METHOD USING PLASMA-ETCHING PROCESS, AND ELECTRODE MEMBER LINTEC Corporation (JP) 2013-01-30 EP claimed
US-20130008697-A1 IRREGULAR-SURFACE FORMING METHOD USING PLASMA-ETCHING PROCESS, AND ELECTRODE MEMBER LINTEC CORPORATION (JP) 2013-01-10 US claimed
US-20110220894-A1 SEMICONDUCTOR LAYER AND METHOD FOR FORMING SAME SHARP KABUSHIKI KAISHA (JP) 2011-09-15 US claimed
EP-2357672-A1 SEMICONDUCTOR LAYER AND METHOD FOR FORMING SAME Sharp Kabushiki Kaisha (JP) 2011-08-17 EP claimed
US-6869732-B2 Glass substrate for photomasks and preparation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-22 US claimed
US-6855908-B2 Glass substrate and leveling thereof SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-02-15 US claimed
WO-1999032843-A1 PROCESS FOR SEPARATING AND PURIFYING FLUORINE COMPOUNDS, AND INSTALLATION THEREOF L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 1999-07-01 WO claimed
EP-0924485-A1 Process for separating and puryfying fluorine compounds, and installation thereof L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 1999-06-23 EP claimed
US-5479875-A MICROWAVE PLASMA VAPOR DEPOSITION, NUCLEATION KABUSHIKI KAISHA KOBE SEIKO SHO (JP) 1996-01-02 US claimed