SCHEMBL16263308

SCHEMBL16263308

CC(C)(O)CCOS(=O)(=O)C(F)(F)C(=O)OCC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.39

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 3/20 0.39
▸ MEN1 O00255 3/20 0.38
▸ KMT2A Q03164 3/20 0.38
▸ L3MBTL1 Q9Y468 2/20 0.38
▸ CA12 O43570 1/20 0.34
▸ CA1 P00915 1/20 0.34
▸ CA2 P00918 1/20 0.34
▸ CA9 Q16790 1/20 0.34
▸ SCN9A Q15858 12/20 0.34
▸ MAPT P10636 2/20 0.32
▸ ATM Q13315 1/20 0.32
▸ THRB P10828 1/20 0.31
▸ SCN5A Q14524 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL26190602 0.81 ALDH1A1 (0.46) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL15083002 0.80 ALDH1A1 (0.35) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL15082954 0.79 ALDH1A1 (0.38) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL12667136 0.77 ALDH1A1 (0.36) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL12674679 0.77 ALDH1A1 (0.36) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL593099 0.76 ALDH1A1 (0.45) ALDH1A1MEN1KMT2AL3MBTL1CA12
Tert-Butylamine SCHEMBL2245604 0.76 ALDH1A1 (0.43) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL2247103 0.75 ALDH1A1 (0.44) ALDH1A1MEN1KMT2AL3MBTL1CA12
Ammonia Solution, Strong SCHEMBL16105230 0.75 ALDH1A1 (0.44) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL685747 0.74 ALDH1A1 (0.53) ALDH1A1MEN1KMT2AL3MBTL1CA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9557643-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device using the same and electronic device FUJIFILM CORPORATION (JP) 2017-01-31 — — US disclosed
US-9557643-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device using the same and electronic device FUJIFILM CORPORATION (JP) 2017-01-31 — — US disclosed
US-9429840-B2 Pattern forming method, composition used therein, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-08-30 — — US disclosed
US-9429840-B2 Pattern forming method, composition used therein, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-08-30 — — US disclosed
US-9223208-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-12-29 — — US disclosed
US-20150118627-A1 PATTERN FORMING METHOD, COMPOSITION USED TEHREIN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-04-30 — — US disclosed
US-20150118627-A1 PATTERN FORMING METHOD, COMPOSITION USED TEHREIN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-04-30 — — US disclosed
US-20140349224-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-11-27 — — US disclosed
US-20140349224-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-11-27 — — US disclosed
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