SCHEMBL685747

SCHEMBL685747

CC(C)(F)C(=O)OCC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.53

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.53
MEN1 O00255 4/20 0.50
KMT2A Q03164 4/20 0.50
L3MBTL1 Q9Y468 2/20 0.50
CA12 O43570 1/20 0.46
CA1 P00915 1/20 0.46
CA2 P00918 1/20 0.46
CA9 Q16790 1/20 0.46
MAPT P10636 2/20 0.38
ATM Q13315 1/20 0.38
HSD17B10 Q99714 1/20 0.38
SCN9A Q15858 1/20 0.37
TSHR P16473 1/20 0.37
EPHX2 P34913 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL685182 0.90 ALDH1A1 (0.53) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL685881 0.89 ALDH1A1 (0.47) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL686035 0.87 ALDH1A1 (0.50) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL12768748 0.87 ALDH1A1 (0.50) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL10150822 0.86 ALDH1A1 (0.51) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL686003 0.86 ALDH1A1 (0.56) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL17752186 0.85 ALDH1A1 (0.49) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL17281570 0.85 ALDH1A1 (0.49) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL685208 0.85 ALDH1A1 (0.39) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL685815 0.85 ALDH1A1 (0.39) ALDH1A1MEN1KMT2AL3MBTL1CA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 67 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9268226-B2 Resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-23 US disclosed
US-9260407-B2 Salt and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-16 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-9063414-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-23 US disclosed
US-20150132698-A1 RESIN AND RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-05-14 US disclosed
US-8993210-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-03-31 US disclosed
US-8921029-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-12-30 US disclosed
US-8916330-B2 Chemically amplified photoresist composition and method for forming resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-12-23 US disclosed
US-8906589-B2 Salt and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-12-09 US disclosed
US-20110059400-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-10 US disclosed
US-20110053082-A1 RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-03 US disclosed
US-20110053086-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY,LIMITED (JP) 2011-03-03 US disclosed
US-20110039208-A1 PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-17 US disclosed
US-20110039209-A1 COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-17 US disclosed
US-20110033804-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-10 US disclosed
US-20110014567-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-01-20 US disclosed
US-20110014566-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-01-20 US disclosed
US-20100330497-A1 CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-30 US disclosed
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-02 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110059400-A1 PHOTORESIST COMPOSITION C1R, C1S, CCNT1 ALDH1A1 2162/4885MEN1 1989/4885KMT2A 2110/4885
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME C1S, H1-0, H1-2 ALDH1A1 918/4885MEN1 238/4885KMT2A 1330/4885
US-20110014567-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME XPA, XPOT, ERCC4 ALDH1A1 4445/4885MEN1 1450/4885KMT2A 2851/4885
US-20110014566-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME XPA, NPPA, ERCC4 ALDH1A1 3326/4885MEN1 888/4885KMT2A 369/4885
US-20110053086-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN OR10J3, C1R, C9 ALDH1A1 2546/4885MEN1 4120/4885KMT2A 1336/4885
US-20110039209-A1 COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME RCOR3, RCN1, HRH4 ALDH1A1 1871/4885MEN1 2367/4885KMT2A 2143/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.