SCHEMBL16320556

SCHEMBL16320556

CCCOCC(=O)C(OCCC)(OCCC)C(=O)OCC.[Zr]

nearest known ligand 0.38

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
CES2 O00748 2/20 0.38
CYP4F2 P78329 3/20 0.36
CYP4A11 Q02928 3/20 0.36
ALDH1A1 P00352 2/20 0.32
TSHR P16473 1/20 0.32
PIN1 Q13526 1/20 0.32
MEN1 O00255 2/20 0.31
KMT2A Q03164 2/20 0.31
PKM P14618 2/20 0.31
KDM4E B2RXH2 1/20 0.31
POLB P06746 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31
MAPT P10636 1/20 0.30
ATM Q13315 1/20 0.30
L3MBTL1 Q9Y468 1/20 0.30
THRB P10828 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6138567 0.97 CES2 (0.38) CES2CYP4F2CYP4A11ALDH1A1TSHR
SCHEMBL4534558 0.87 CES2 (0.46) CES2CYP4F2CYP4A11ALDH1A1TSHR
SCHEMBL16320641 0.84 CES2 (0.46) CES2CYP4F2CYP4A11ALDH1A1TSHR
SCHEMBL15793893 0.81 CYP4F2 (0.36) CES2CYP4F2CYP4A11ALDH1A1TSHR
SCHEMBL28344100 0.79 CES2 (0.42) CES2
SCHEMBL15793631 0.77 CYP4F2 (0.36) CYP4F2CYP4A11ALDH1A1TSHRPIN1
SCHEMBL4622979 0.76 CES2 (0.40) CES2
SCHEMBL14960350 0.69 CYP4F2 (0.61) CYP4F2CYP4A11ALDH1A1TSHRPIN1
SCHEMBL16319998 0.68 CYP4F2 (0.34) CYP4F2CYP4A11ALDH1A1TSHRMEN1
SCHEMBL1053009 0.68 GAA (0.50) CES2ALDH1A1TSHRKMT2ANPSR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11884839-B2 Acetal-protected silanol group-containing polysiloxane composition NISSAN CHEMICAL CORPORATION (JP) 2024-01-30 US disclosed
US-10838303-B2 Resist underlayer film forming composition for lithography containing hydrolyzable silane having carbonate skeleton NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2020-11-17 US disclosed
US-10558119-B2 Composition for coating resist pattern NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2020-02-11 US disclosed
US-10372040-B2 Resist underlayer film forming composition for lithography containing hydrolyzable silane having halogen-containing carboxylic acid amide group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2019-08-06 US disclosed
US-20190185707-A1 ACETAL-PROTECTED SILANOL GROUP-CONTAINING POLYSILOXANE COMPOSITION NISSAN CHEMICAL CORPORATION (JP) 2019-06-20 US disclosed
US-10139729-B2 Coating composition for pattern reversal on soc pattern NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-11-27 US disclosed
US-20180239250-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING HYDROLYZABLE SILANE HAVING CARBONATE SKELETON NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-08-23 US disclosed
US-20180149977-A1 COMPOSITION FOR COATING RESIST PATTERN NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-05-31 US disclosed
US-20170322491-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING HYDROLYZABLE SILANE HAVING HALOGEN-CONTAINING CARBOXYLIC ACID AMIDE GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-11-09 US disclosed
US-20170271151-A1 COATING COMPOSITION FOR PATTERN REVERSAL ON SOC PATTERN NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-09-21 US disclosed
US-20140377957-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION FOR SOLVENT DEVELOPMENT NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-12-25 US disclosed