Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CES2 | O00748 | 2/20 | 0.38 |
| ▸ | CYP4F2 | P78329 | 3/20 | 0.36 |
| ▸ | CYP4A11 | Q02928 | 3/20 | 0.36 |
| ▸ | TSHR | P16473 | 2/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.32 |
| ▸ | PIN1 | Q13526 | 1/20 | 0.32 |
| ▸ | MEN1 | O00255 | 2/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.31 |
| ▸ | PKM | P14618 | 2/20 | 0.31 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.31 |
| ▸ | POLB | P06746 | 1/20 | 0.31 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.31 |
| ▸ | MAPT | P10636 | 1/20 | 0.30 |
| ▸ | ATM | Q13315 | 1/20 | 0.30 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.30 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.30 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.30 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.30 |
| ▸ | HTR2A | P28223 | 1/20 | 0.30 |
| ▸ | PMP22 | Q01453 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16320556 | 0.97 | CES2 (0.38) | CES2CYP4F2CYP4A11TSHRALDH1A1 | |
| SCHEMBL16320641 | 0.87 | CES2 (0.46) | CES2CYP4F2CYP4A11TSHRALDH1A1 | |
| SCHEMBL4534558 | 0.84 | CES2 (0.46) | CES2CYP4F2CYP4A11TSHRALDH1A1 | |
| SCHEMBL15793631 | 0.81 | CYP4F2 (0.36) | CYP4F2CYP4A11TSHRALDH1A1PIN1 | |
| SCHEMBL28344100 | 0.79 | CES2 (0.42) | CES2 | |
| SCHEMBL15793893 | 0.77 | CYP4F2 (0.36) | CES2CYP4F2CYP4A11TSHRALDH1A1 | |
| SCHEMBL4622979 | 0.76 | CES2 (0.40) | CES2 | |
| SCHEMBL14960350 | 0.69 | CYP4F2 (0.61) | CYP4F2CYP4A11TSHRALDH1A1PIN1 | |
| SCHEMBL16320318 | 0.68 | CYP4F2 (0.34) | CYP4F2CYP4A11TSHRALDH1A1MEN1 | |
| SCHEMBL1053009 | 0.68 | GAA (0.50) | CES2TSHRALDH1A1KMT2ANPSR1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11884839-B2 | Acetal-protected silanol group-containing polysiloxane composition | NISSAN CHEMICAL CORPORATION (JP) | 2024-01-30 | — | — | US | disclosed |
| US-10838303-B2 | Resist underlayer film forming composition for lithography containing hydrolyzable silane having carbonate skeleton | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2020-11-17 | — | — | US | disclosed |
| US-10558119-B2 | Composition for coating resist pattern | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2020-02-11 | — | — | US | disclosed |
| US-10372040-B2 | Resist underlayer film forming composition for lithography containing hydrolyzable silane having halogen-containing carboxylic acid amide group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2019-08-06 | — | — | US | disclosed |
| US-20190185707-A1 | ACETAL-PROTECTED SILANOL GROUP-CONTAINING POLYSILOXANE COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2019-06-20 | — | — | US | disclosed |
| US-10139729-B2 | Coating composition for pattern reversal on soc pattern | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-11-27 | — | — | US | disclosed |
| US-20180239250-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING HYDROLYZABLE SILANE HAVING CARBONATE SKELETON | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-08-23 | — | — | US | disclosed |
| US-20180149977-A1 | COMPOSITION FOR COATING RESIST PATTERN | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-05-31 | — | — | US | disclosed |
| US-20170322491-A1 | RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING HYDROLYZABLE SILANE HAVING HALOGEN-CONTAINING CARBOXYLIC ACID AMIDE GROUP | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-11-09 | — | — | US | disclosed |
| US-20170271151-A1 | COATING COMPOSITION FOR PATTERN REVERSAL ON SOC PATTERN | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2017-09-21 | — | — | US | disclosed |
| US-20140377957-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION FOR SOLVENT DEVELOPMENT | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-12-25 | — | — | US | disclosed |
| EP-1117102-B1 | Method of manufacturing material for forming insulating film | JSR CORP (JP) | 2005-08-10 | — | — | EP | disclosed |
| US-6642352-B2 | Providing a silicon inorganic polymer compound or polyarylenes or polyphenylene ether organic polymer compound, treating the polymeric compound with a zeta-potential producing filter material, and producing curable polymer compound | JSR CORPORATION (JP) | 2003-11-04 | — | — | US | disclosed |
| US-20010009936-A1 | Method of manufacturing material for forming insulating film | JSR CORPORATION (JP) | 2001-07-26 | — | — | US | disclosed |
| EP-1117102-A2 | Method of manufacturing material for forming insulating film | JSR Corporation (JP) | 2001-07-18 | — | — | EP | disclosed |