SCHEMBL16338679

SCHEMBL16338679

CCO[Si](COC(=O)c1ccccc1)(OCC)OCC

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.56
TDP1 Q9NUW8 3/20 0.50
SMN1; SMN2 Q16637 4/20 0.49
NPC1 O15118 2/20 0.49
RAB9A P51151 2/20 0.49
GAA P10253 1/20 0.49
KMT2A Q03164 2/20 0.49
TSHR P16473 2/20 0.49
SLC6A3 Q01959 2/20 0.49
MAPK1 P28482 1/20 0.49
HIF1A Q16665 1/20 0.49
SLC6A2 P23975 1/20 0.49
MEN1 O00255 1/20 0.47
ALDH1A1 P00352 2/20 0.47
L3MBTL1 Q9Y468 1/20 0.45
CA12 O43570 1/20 0.44
CA1 P00915 1/20 0.44
CA2 P00918 1/20 0.44
ESR1 P03372 1/20 0.44
CA7 P43166 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16338634 0.87 LMNA (0.67) LMNATDP1SMN1; SMN2NPC1RAB9A
SCHEMBL19698074 0.85 CA2 (0.51) LMNATDP1NPC1RAB9AGAA
SCHEMBL3907608 0.85 L3MBTL1 (0.47) LMNASMN1; SMN2RAB9AGAAKMT2A
SCHEMBL13268597 0.83 LMNA (0.62) LMNATDP1SMN1; SMN2NPC1RAB9A
SCHEMBL15070606 0.82 LMNA (0.55) LMNATDP1SMN1; SMN2NPC1RAB9A
SCHEMBL19698075 0.82 HRH3 (0.52) SMN1; SMN2NPC1RAB9AALDH1A1CA12
SCHEMBL1224989 0.81 TDP1 (0.62) LMNATDP1SMN1; SMN2NPC1RAB9A
Ammonia Solution, Strong SCHEMBL28440111 0.80 TDP1 (0.60) LMNATDP1SMN1; SMN2NPC1RAB9A
Ethyl Benzoate SCHEMBL11149423 0.80 LMNA (0.66) LMNATDP1SMN1; SMN2NPC1RAB9A
Ethyl Benzoate SCHEMBL25388294 0.79 LMNA (0.70) LMNATDP1SMN1; SMN2NPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10109485-B2 Silicon-containing condensate, composition for forming a silicon-containing resist under layer film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-10-23 US disclosed
EP-2826826-B1 COMPOSITION FOR FORMING A COATING TYPE BPSG FILM, SUBSTRATE FORMED A FILM BY SAID COMPOSITION, AND PATTERNING PROCESS USING SAID COMPOSITION SHINETSU CHEMICAL CO (JP) 2018-08-01 EP disclosed
US-9971245-B2 Silicon-containing polymer, silicon-containing compound, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed
US-9902875-B2 Composition for forming a coating type BPSG film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-9880470-B2 Composition for forming a coating type silicon-containing film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-30 US disclosed
US-20170154766-A1 SILICON-CONTAINING CONDENSATE, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDER LAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-01 US disclosed
US-9627204-B2 Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-18 US disclosed
US-9580623-B2 Patterning process using a boron phosphorus silicon glass film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-02-28 US disclosed
US-9580623-B2 Patterning process using a boron phosphorus silicon glass film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-02-28 US disclosed
US-20160276152-A1 PATTERNING PROCESS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2016-09-22 US disclosed
US-20160276152-A1 PATTERNING PROCESS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2016-09-22 US disclosed
US-20160229939-A1 SILICON-CONTAINING POLYMER, SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-11 US disclosed
US-20160096977-A1 COMPOSITION FOR FORMING A COATING TYPE SILICON-CONTAINING FILM, SUBSTRATE, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-07 US disclosed
US-20160096978-A1 COMPOSITION FOR FORMING A COATING TYPE BPSG FILM, SUBSTRATE, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-07 US disclosed
EP-2826826-A1 Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition Shin-Etsu Chemical Co., Ltd. (JP) 2015-01-21 EP disclosed
US-20150004791-A1 COMPOSITION FOR FORMING A COATING TYPE BPSG FILM, SUBSTRATE FORMED A FILM BY SAID COMPOSITION, AND PATTERNING PROCESS USING SAID COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-01-01 US disclosed