SCHEMBL16593308

SCHEMBL16593308

[O]C1(O[C]=O)CC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16593738 0.88
SCHEMBL16593474 0.88
SCHEMBL1766338 0.65
SCHEMBL131822 0.61
SCHEMBL382690 0.61
SCHEMBL622611 0.61
SCHEMBL17414865 0.60
SCHEMBL4675178 0.59 CYP19A1 (0.30)
SCHEMBL382785 0.59 ALDH1A1 (0.35)
SCHEMBL8067054 0.59

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11687003-B2 Negative resist pattern-forming method, and composition for upper layer film formation JSR CORPORATION (JP) 2023-06-27 US disclosed
US-10824073-B2 Radiation-sensitive resin composition and resist pattern-forming method JSR CORPORATION (JP) 2020-11-03 US disclosed
US-20190004426-A1 NEGATIVE RESIST PATTERN-FORMING METHOD, AND COMPOSITION FOR UPPER LAYER FILM FORMATION JSR CORPORATION (JP) 2019-01-03 US disclosed
US-20180329298-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2018-11-15 US disclosed
US-10073344-B2 Negative resist pattern-forming method, and composition for upper layer film formation JSR CORPORATION (JP) 2018-09-11 US disclosed
US-9760004-B2 Radiation-sensitive resin composition and resist pattern-forming method JSR CORPORATION (JP) 2017-09-12 US disclosed
US-9703195-B2 Radiation-sensitive resin composition, resist pattern-forming method, polymer, and method for producing compound JSR CORPORATION (JP) 2017-07-11 US disclosed
US-20160299432-A1 NEGATIVE RESIST PATTERN-FORMING METHOD, AND COMPOSITION FOR UPPER LAYER FILM FORMATION JSR CORPORATION (JP) 2016-10-13 US disclosed
US-20150323866-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN-FORMING METHOD, POLYMER, AND METHOD FOR PRODUCING COMPOUND JSR CORPORATION (JP) 2015-11-12 US disclosed
US-20150093703-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-04-02 US disclosed