SCHEMBL16683136

SCHEMBL16683136

CCC(C)c1ccc(S(=O)(=O)c2c(F)c(F)c(S(=O)(=O)O)c(F)c2F)cc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 3/20 0.40
KMT2A Q03164 3/20 0.40
ALDH1A1 P00352 4/20 0.39
KDM4E B2RXH2 1/20 0.39
CA12 O43570 1/20 0.37
CA1 P00915 1/20 0.37
CA2 P00918 1/20 0.37
CA7 P43166 1/20 0.37
CA13 Q8N1Q1 1/20 0.37
TSHR P16473 2/20 0.37
USP2 O75604 1/20 0.36
GAA P10253 1/20 0.36
PKM P14618 1/20 0.36
HPGD P15428 1/20 0.36
ALOX15 P16050 1/20 0.36
HSD17B10 Q99714 1/20 0.36
HDAC4 P56524 1/20 0.35
HDAC2 Q92769 1/20 0.35
HDAC8 Q9BY41 1/20 0.35
NPSR1 Q6W5P4 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16683143 0.82 ALDH1A1 (0.40) MEN1KMT2AALDH1A1KDM4ETSHR
SCHEMBL16683152 0.81 MEN1 (0.48) MEN1KMT2AALDH1A1KDM4ETSHR
SCHEMBL16683159 0.80 ALDH1A1 (0.35) MEN1KMT2AALDH1A1KDM4ETSHR
SCHEMBL16683157 0.80 ALDH1A1 (0.38) MEN1KMT2AALDH1A1KDM4ETSHR
SCHEMBL682266 0.80 ALDH1A1 (0.43) MEN1KMT2AALDH1A1KDM4ETSHR
SCHEMBL16081291 0.79 ALDH1A1 (0.47) MEN1KMT2AALDH1A1KDM4ECA12
SCHEMBL16683128 0.79 CA12 (0.41) MEN1KMT2AALDH1A1KDM4ECA12
SCHEMBL12086454 0.79 MEN1 (0.51) MEN1KMT2AALDH1A1KDM4ETSHR
SCHEMBL10031603 0.79 MEN1 (0.51) MEN1KMT2AALDH1A1KDM4ETSHR
SCHEMBL116856 0.79 MEN1 (0.51) MEN1KMT2AALDH1A1KDM4ETSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20150118628-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN, PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2015-04-30 US disclosed