SCHEMBL166950

SCHEMBL166950

CC(C)CN=NCC(C)C

nearest known ligand 0.42

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
TRPA1 O75762 1/20 0.42
TSHR P16473 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1487502 1.00 TRPA1 (0.42) TRPA1TSHR
SCHEMBL11071930 0.86
SCHEMBL11688232 0.83 TSHR (0.37) TRPA1TSHR
SCHEMBL8520993 0.81
SCHEMBL8521162 0.81
SCHEMBL11691790 0.78 TRPA1 (0.31) TRPA1
SCHEMBL14653823 0.78
SCHEMBL9885752 0.78
SCHEMBL4476401 0.76 TSHR (0.39) TRPA1TSHR
SCHEMBL19219045 0.76

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 169 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11664214-B2 Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications APPLIED MATERIALS, INC. (US) 2023-05-30 US claimed
CN-116075920-A Method for producing high density, nitrogen doped carbon films for hard mask and other patterning applications 应用材料公司 2023-05-05 CN claimed
WO-2022005703-A1 METHODS FOR PRODUCING HIGH-DENSITY, NITROGEN-DOPED CARBON FILMS FOR HARDMASKS AND OTHER PATTERNING APPLICATIONS APPLIED MATERIALS, INC. (US) 2022-01-06 WO claimed
US-20210407791-A1 METHODS FOR PRODUCING HIGH-DENSITY, NITROGEN-DOPED CARBON FILMS FOR HARDMASKS AND OTHER PATTERNING APPLICATIONS APPLIED MATERIALS, INC. 2021-12-30 US claimed
US-8324095-B2 Integration of ALD tantalum nitride for copper metallization APPLIED MATERIALS, INC. (US) 2012-12-04 US claimed
JP-4711624-B2 2011-06-29 JP claimed
WO-2010054075-A2 PLASMA AND THERMAL ANNEAL TREATMENT TO IMPROVE OXIDATION RESISTANCE OF METAL-CONTAINING FILMS APPLIED MATERIALS, INC. (US) 2010-05-14 WO claimed
US-20100120245-A1 PLASMA AND THERMAL ANNEAL TREATMENT TO IMPROVE OXIDATION RESISTANCE OF METAL-CONTAINING FILMS APPLIED MATERIALS, INC. 2010-05-13 US claimed
US-20100075494-A1 INTEGRATION OF ALD TANTALUM NITRIDE FOR COPPER METALLIZATION APPLIED MATERIALS, INC. 2010-03-25 US claimed
US-7211508-B2 Atomic layer deposition of tantalum based barrier materials APPLIED MATERIALS, INC. (US) 2007-05-01 US claimed
US-7049226-B2 Integration of ALD tantalum nitride for copper metallization APPLIED MATERIALS, INC. (US) 2006-05-23 US claimed
US-20050106865-A1 Integration of ALD tantalum nitride for copper metallization APPLIED MATERIALS, INC. 2005-05-19 US claimed
US-20050009325-A1 Atomic layer deposition of barrier materials APPLIED MATERIALS, INC. 2005-01-13 US claimed
WO-2004113585-A2 ATOMIC LAYER DEPOSITION OF BARRIER MATERIALS APPLIED MATERIALS, INC. (US) 2004-12-29 WO claimed
US-20030124262-A1 Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application APPLIED MATERIALS INC. 2003-07-03 US claimed
WO-2003038892-A2 ATOMIC-LAYER-DEPOSITED TANTALUM NITRIDE AND ALPHA-PHASE TANTALUM AS BARRIER LAYERS FOR COPPER METALLIZATION APPLIED MATERIALS, INC. (US) 2003-05-08 WO claimed
US-20030082307-A1 Integration of ALD tantalum nitride and alpha-phase tantalum for copper metallization application APPLIED MATERIALS, INC. 2003-05-01 US claimed
US-20030082301-A1 Enhanced copper growth with ultrathin barrier layer for high performance interconnects APPLIED MATERIALS, INC. 2003-05-01 US claimed
EP-0809646-A1 A METHOD FOR MANUFACTURING ORGANOSILANES E.I. DU PONT DE NEMOURS AND COMPANY (US) 1997-12-03 EP claimed
WO-1996025419-A1 A METHOD FOR MANUFACTURING ORGANOSILANES E.I. DU PONT DE NEMOURS AND COMPANY (US) 1996-08-22 WO claimed