SCHEMBL16706519

SCHEMBL16706519

CCC(C)c1ccc(C(=O)OC(OC2CCCCC2)C(C)(C)C)cc1

nearest known ligand 0.42

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
▸ LMNA P02545 1/20 0.41
▸ CYP1A2 P05177 1/20 0.41
▸ CYP2D6 P10635 1/20 0.41
▸ SCN1A P35498 1/20 0.41
▸ SCN2A Q99250 1/20 0.41
▸ SCN3A Q9NY46 1/20 0.41
▸ NPSR1 Q6W5P4 1/20 0.39
▸ HTT P42858 2/20 0.39
▸ NPC1 O15118 1/20 0.39
▸ RAB9A P51151 1/20 0.39
▸ SMN1; SMN2 Q16637 1/20 0.39
▸ ALDH1A1 P00352 2/20 0.38
▸ KMT2A Q03164 3/20 0.38
▸ MEN1 O00255 2/20 0.37
▸ TSHR P16473 1/20 0.36
▸ L3MBTL1 Q9Y468 2/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17833876 0.84 LMNA (0.40) LMNACYP1A2CYP2D6SCN1ASCN2A
SCHEMBL16706504 0.82 HTT (0.39) LMNACYP1A2CYP2D6SCN1ASCN2A
SCHEMBL16746682 0.80 ALDH1A1 (0.42) CYP2D6NPSR1NPC1RAB9ASMN1; SMN2
SCHEMBL13144169 0.80 HTT (0.53) LMNASCN1ASCN2ASCN3ANPSR1
SCHEMBL16139515 0.79 ALDH1A1 (0.39) NPSR1HTTSMN1; SMN2ALDH1A1KMT2A
SCHEMBL13144168 0.79 HTT (0.51) LMNASCN1ASCN2ASCN3ANPSR1
SCHEMBL16247792 0.78 ALDH1A1 (0.40) LMNANPSR1SMN1; SMN2ALDH1A1KMT2A
SCHEMBL683332 0.76 NPSR1 (0.42) LMNACYP1A2CYP2D6SCN1ASCN2A
SCHEMBL17428503 0.74 L3MBTL1 (0.40) LMNACYP1A2CYP2D6SCN1ASCN2A
SCHEMBL13137696 0.74 NPSR1 (0.43) LMNACYP1A2CYP2D6NPSR1HTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9291896-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, pattern forming method, manufacturing method of electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-03-22 — — US disclosed
US-20150132687-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-05-14 — — US disclosed
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