SCHEMBL16738147

SCHEMBL16738147

[Al+3].[Mg+2].[Mg+2].[Mg+2].[N-3].[N-3].[N-3].[SiH4].[SiH4].[SiH4]

nearest known ligand 0.00

Known targets — ChEMBL curated mechanism

ATP4AATP4BGABBR1GABBR2HMGCR

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16738146 0.87
SCHEMBL16738152 0.87
SCHEMBL2219027 0.87
SCHEMBL165432 0.87
SCHEMBL19439541 0.75
SCHEMBL17184588 0.75
SCHEMBL3962334 0.75
SCHEMBL15861907 0.75
SCHEMBL2575646 0.75
Charcoal, Activated SCHEMBL6363922 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9722064-B2 Isolated gate field effect transistor and manufacture method thereof DYNAX SEMICONDUCTOR, INC. (CN) 2017-08-01 US claimed
US-20150144955-A1 Isolated Gate Field Effect Transistor and Manufacture Method Thereof DYNAX SEMICONDUCTOR, INC. (CN) 2015-05-28 US claimed
US-9722064-B2 Isolated gate field effect transistor and manufacture method thereof DYNAX SEMICONDUCTOR, INC. (CN) 2017-08-01 US disclosed
US-20150144955-A1 Isolated Gate Field Effect Transistor and Manufacture Method Thereof DYNAX SEMICONDUCTOR, INC. (CN) 2015-05-28 US disclosed