SCHEMBL16738152

SCHEMBL16738152

[Mg+2].[Mg+2].[Mg+2].[N-3].[N-3].[SiH4].[SiH4].[SiH4]

nearest known ligand 0.00

Known targets — ChEMBL curated mechanism

ATP4AATP4BGABBR1GABBR2HMGCR

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16738147 0.87
SCHEMBL34700 0.82
SCHEMBL15392937 0.67
SCHEMBL9121676 0.67
SCHEMBL15736614 0.67
SCHEMBL2443636 0.67
SCHEMBL1537999 0.67
SCHEMBL2289595 0.67
SCHEMBL3290231 0.67
SCHEMBL3103425 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 181 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118598646-B Strong interface bonding low-carbon refractory material based on magnesium silicon nitride and preparation method thereof 武汉科技大学 2026-05-15 CN claimed
CN-122010575-A Magnetic chopped carbon fiber reinforced silicon magnesium nitride ceramic and preparation method thereof 武汉科技大学 2026-05-12 CN claimed
CN-118598675-B Porous magnesia-alumina spinel@silicon-magnesium nitride whisker composite powder and preparation method thereof 武汉科技大学 2026-05-12 CN claimed
CN-121573998-A Fish scale space structure Mg-SiAlON@MgO core-shell composite powder and preparation method thereof 武汉科技大学 2026-02-27 CN claimed
CN-119977603-A Low-carbon refractory material additive, preparation method and low-carbon refractory material 北京科技大学 2025-05-13 CN claimed
CN-119663414-A Using MgSiN2Preparation of Si with high length-diameter ratio and high dispersibility by combining sintering aid and foaming method3N4Whisker method 中国人民解放军国防科技大学 2025-03-21 CN claimed
CN-119638439-A High-performance silicon nitride-aluminum nitride ceramic device and 3D printing method thereof 东莞理工学院 2025-03-18 CN claimed
CN-118598675-A Porous magnesia-alumina spinel@silicon-magnesium nitride whisker composite powder and preparation method thereof 武汉科技大学 2024-09-06 CN claimed
CN-118600559-A Controllable defect-free silicon magnesium nitride whisker powder and preparation method thereof 武汉科技大学 2024-09-06 CN claimed
CN-118598646-A Strong interface bonding low-carbon refractory material based on magnesium silicon nitride and preparation method thereof 武汉科技大学 2024-09-06 CN claimed
CN-109096881-B Pattern type powder coating and preparation method thereof 芜湖职业技术学院 2021-03-26 CN claimed
CN-112377463-A High-speed magnetic suspension fan rear cover radiating shell and preparation method thereof 江苏优格曼航空科技有限公司 2021-02-19 CN claimed
CN-112239363-A Silicon nitride magnesium powder and preparation method thereof, ceramic material and heat conducting substrate 衡阳凯新特种材料科技有限公司 2021-01-19 CN claimed
CN-107592873-B Polyester film having electrical insulation and thermal conduction properties 杜邦帝人薄膜美国有限合伙公司 2020-09-15 CN claimed
CN-111635236-A Method for microwave sintering of sialon ceramic material 南京理工大学 2020-09-08 CN claimed
CN-111484335-A Sintering aid composite additive for silicon nitride ceramic slurry, silicon nitride ceramic slurry and preparation method and application thereof 衡阳凯新特种材料科技有限公司 2020-08-04 CN claimed
CN-111362704-A High-thermal-conductivity silicon nitride ceramic and preparation method thereof 西安澳秦新材料有限公司 2020-07-03 CN claimed
CN-110938355-A Colorful pattern powder coating and preparation method thereof 芜湖职业技术学院 2020-03-31 CN claimed
US-9722064-B2 Isolated gate field effect transistor and manufacture method thereof DYNAX SEMICONDUCTOR, INC. (CN) 2017-08-01 US claimed
US-20150144955-A1 Isolated Gate Field Effect Transistor and Manufacture Method Thereof DYNAX SEMICONDUCTOR, INC. (CN) 2015-05-28 US claimed