SCHEMBL169923

SCHEMBL169923

CCOCC(CC)C(=O)O.CCOCC(CC)C(=O)O

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA2 P00918 2/20 0.46
MAPK1 P28482 1/20 0.46
SLC1A1 P43005 3/20 0.45
SLC1A3 P43003 2/20 0.45
SLC1A2 P43004 2/20 0.45
TDP1 Q9NUW8 2/20 0.42
CHRM1 P11229 2/20 0.42
ADRA1A P35348 2/20 0.42
AKR1A1 P14550 1/20 0.42
CHRM3 P20309 1/20 0.42
HTR2A P28223 1/20 0.42
HTR2C P28335 1/20 0.42
HRH1 P35367 1/20 0.42
DRD3 P35462 1/20 0.42
SLC6A3 Q01959 1/20 0.42
HDAC1 Q13547 1/20 0.42
HDAC2 Q92769 1/20 0.42
GCLC P48506 2/20 0.36
TSHR P16473 2/20 0.34
USP2 O75604 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL60732 1.00 CA2 (0.46) CA2MAPK1SLC1A1SLC1A3SLC1A2
Ethylene Glycol SCHEMBL5068932 0.94 CA2 (0.42) CA2MAPK1SLC1A1SLC1A3SLC1A2
SCHEMBL9284227 0.85 CA2 (0.36) CA2MAPK1SLC1A1SLC1A3SLC1A2
SCHEMBL9488644 0.85 CA2 (0.36) CA2MAPK1SLC1A1SLC1A3SLC1A2
SCHEMBL30544382 0.82 ALDH1A1 (0.42) CA2MAPK1TDP1TSHRALDH1A1
SCHEMBL8096458 0.82 CYP1A2 (0.37) CA2MAPK1SLC1A1SLC1A3SLC1A2
SCHEMBL498555 0.82 CA2 (0.48) CA2MAPK1SLC1A1SLC1A3SLC1A2
SCHEMBL2245789 0.82 CHRM1 (0.62) CA2MAPK1SLC1A1SLC1A3SLC1A2
SCHEMBL17060892 0.82 CA2 (0.34) CA2MAPK1SLC1A1SLC1A3SLC1A2
Heptanal SCHEMBL8581800 0.81 TSHR (0.50) CA2MAPK1TSHRUSP2CYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9120288-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for preparing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2015-09-01 US disclosed
US-9116437-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2015-08-25 US disclosed
US-8790860-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and resist film, pattern forming method, method for preparing electronic device, and electronic device, each using the same FUJIFILM CORPORATION (JP) 2014-07-29 US disclosed
US-20130078426-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
US-20130078432-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
US-20120058427-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-03-08 US disclosed