Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 2/20 | 0.48 |
| ▸ | CA2 | P00918 | 2/20 | 0.48 |
| ▸ | CA7 | P43166 | 2/20 | 0.48 |
| ▸ | CA9 | Q16790 | 2/20 | 0.48 |
| ▸ | CA12 | O43570 | 1/20 | 0.48 |
| ▸ | CA14 | Q9ULX7 | 1/20 | 0.48 |
| ▸ | MAOB | P27338 | 2/20 | 0.46 |
| ▸ | MAOA | P21397 | 1/20 | 0.46 |
| ▸ | OPRM1 | P35372 | 1/20 | 0.43 |
| ▸ | OPRL1 | P41146 | 1/20 | 0.43 |
| ▸ | CHRNA1 | P02708 | 1/20 | 0.42 |
| ▸ | CHRNG | P07510 | 1/20 | 0.42 |
| ▸ | CHRNB1 | P11230 | 1/20 | 0.42 |
| ▸ | CHRNB2 | P17787 | 1/20 | 0.42 |
| ▸ | CHRNB4 | P30926 | 1/20 | 0.42 |
| ▸ | CHRNA3 | P32297 | 1/20 | 0.42 |
| ▸ | CHRNA4 | P43681 | 1/20 | 0.42 |
| ▸ | CHRND | Q07001 | 1/20 | 0.42 |
| ▸ | POLB | P06746 | 1/20 | 0.41 |
| ▸ | ACHE | P22303 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12857831 | 0.92 | ACHE (0.56) | CA1CA2CA7CA9CA12 | |
| SCHEMBL12857953 | 0.92 | ACHE (0.56) | CA1CA2CA7CA9CA12 | |
| SCHEMBL18287951 | 0.92 | CA1 (0.44) | CA1CA2CA7CA9CA12 | |
| SCHEMBL16543025 | 0.92 | CA1 (0.44) | CA1CA2CA7CA9CA12 | |
| SCHEMBL12857775 | 0.88 | ACHE (0.50) | CA1CA2CA7CA9CA12 | |
| SCHEMBL12857955 | 0.88 | ACHE (0.50) | CA1CA2CA7CA9CA12 | |
| SCHEMBL21709952 | 0.88 | CYP1A1 (0.50) | CA1CA2CA7CA9CA12 | |
| SCHEMBL12858083 | 0.88 | ACHE (0.50) | CA1CA2CA7CA9CA12 | |
| SCHEMBL21709951 | 0.83 | CYP1A1 (0.46) | MAOBMAOACHRNA1CHRNGCHRNB1 | |
| SCHEMBL12857952 | 0.83 | ACHE (0.46) | MAOBMAOAOPRM1OPRL1CHRNA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3109703-B1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, AND METHOD FOR FORMING PATTERN USING SAME | TOKYO ELECTRON LTD (JP) | 2020-12-30 | — | — | EP | disclosed |
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | TOKYO ELECTRON LIMITED (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | TOKYO ELECTRON LIMITED (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-07-10 | — | — | US | disclosed |
| US-9989849-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-06-05 | — | — | US | disclosed |
| US-9989849-B2 | Chemically amplified resist material and resist pattern-forming method | JSR CORPORATION (JP) | 2018-06-05 | — | — | US | disclosed |
| US-9971247-B2 | Pattern-forming method | OSAKA UNIVERSITY (JP) | 2018-05-15 | — | — | US | disclosed |
| US-9971247-B2 | Pattern-forming method | OSAKA UNIVERSITY (JP) | 2018-05-15 | — | — | US | disclosed |
| US-9939729-B2 | Resist pattern-forming method | JSR CORPORATION (JP) | 2018-04-10 | — | — | US | disclosed |
| US-20170052450-A1 | PATTERN-FORMING METHOD | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052448-A1 | RESIST-PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RESIST MATERIAL | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052450-A1 | PATTERN-FORMING METHOD | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20160357103-A1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING | TOKYO ELECTRON LIMITED (JP) | 2016-12-08 | — | — | US | disclosed |
| US-20160357103-A1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING | TOKYO ELECTRON LIMITED (JP) | 2016-12-08 | — | — | US | disclosed |
| US-20150241779-A1 | REAGENT FOR ENHANCING GENERATION OF CHEMICAL SPECIES | OSAKA UNIVERSITY (JP) | 2015-08-27 | — | — | US | disclosed |
| US-20150241779-A1 | REAGENT FOR ENHANCING GENERATION OF CHEMICAL SPECIES | OSAKA UNIVERSITY (JP) | 2015-08-27 | — | — | US | disclosed |
| US-20150241779-A1 | REAGENT FOR ENHANCING GENERATION OF CHEMICAL SPECIES | OSAKA UNIVERSITY (JP) | 2015-08-27 | — | — | US | disclosed |
| WO-2015125495-A1 | Reagent for Enhancing Generation of Chemical Species | TOYO GOSEI CO., LTD. (JP) | 2015-08-27 | — | — | WO | disclosed |
| WO-2015125495-A1 | Reagent for Enhancing Generation of Chemical Species | TOYO GOSEI CO., LTD. (JP) | 2015-08-27 | — | — | WO | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | ASIC1, ASIC3, CLTA | CA1 50/4885CA2 53/4885CA7 223/4885 |
| US-10018911-B2 | Chemically amplified resist material and resist pattern-forming method | SLC11A2, XRCC5, RAD54L | CA1 203/4885CA2 529/4885CA7 179/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.