SCHEMBL1705883

SCHEMBL1705883

C=C(C)C(=O)OC1CCC(C(O)(C(F)(F)F)C(F)(F)F)CC1C(O)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15840363 0.86
SCHEMBL75049 0.83
SCHEMBL775880 0.82
SCHEMBL75101 0.81 PDK1 (0.30)
SCHEMBL27202244 0.81
SCHEMBL24383568 0.81 PDK1 (0.30)
SCHEMBL13875281 0.81
SCHEMBL1705884 0.79
SCHEMBL22722448 0.79
SCHEMBL75055 0.78 ALDH1A1 (0.31)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 68 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240134276-A1 PHOTOSENSITIVE RESIN COMPOSITION, CURED PRODUCT, FLUORINE-CONTAINING RESIN CURED FILM, AND DISPLAY CENTRAL GLASS COMPANY, LIMITED (JP) 2024-04-25 US disclosed
US-20240134278-A1 SURFACE MODIFIER, PHOTOSENSITIVE RESIN COMPOSITION, CURED PRODUCT, AND DISPLAY CENTRAL GLASS COMPANY, LIMITED (JP) 2024-04-25 US disclosed
WO-2022176885-A1 PHOTOSENSITIVE RESIN COMPOSITION, CURED PRODUCT, FLUORINE-CONTAINING RESIN CURED FILM, AND DISPLAY セントラル硝子株式会社 2022-08-25 WO disclosed
WO-2022176883-A1 SURFACE MODIFIER, PHOTOSENSITIVE RESIN COMPOSITION, CURED PRODUCT, AND DISPLAY セントラル硝子株式会社 2022-08-25 WO disclosed
US-9678425-B2 Polymerizable fluoromonomer, fluoropolymer, resist material, and method of pattern formation CENTRAL GLASS COMPANY, LIMITED (JP) 2017-06-13 US disclosed
US-9678426-B2 Polymerizable fluoromonomer, fluoropolymer, resist material, and method of pattern formation CENTRAL GLASS COMPANY, LIMITED (JP) 2017-06-13 US disclosed
US-9671693-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-06-06 US disclosed
US-9507258-B2 Resin and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-11-29 US disclosed
US-9360754-B2 Resin and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-06-07 US disclosed
US-9291893-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-03-22 US disclosed
US-7575850-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-08-18 US disclosed
US-7575850-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-08-18 US disclosed
US-7566522-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-28 US disclosed
US-7566522-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-28 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed