SCHEMBL1714910

SCHEMBL1714910

O=C(OCC1CO1)c1ccc2cc3ccccc3cc2c1C(=O)OCC1CO1

nearest known ligand 0.47

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
DHFR P00374 1/20 0.46
MGLL Q99685 5/20 0.40
L3MBTL1 Q9Y468 2/20 0.39
MAPK1 P28482 1/20 0.39
TDP1 Q9NUW8 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29678730 0.88 DHFR (0.51) DHFRMGLLL3MBTL1MAPK1
SCHEMBL471853 0.88 DHFR (0.51) DHFRMGLLL3MBTL1MAPK1
SCHEMBL11143008 0.86 DHFR (0.54) DHFRMGLLL3MBTL1MAPK1TDP1
SCHEMBL4130675 0.82 DHFR (0.51) DHFRMGLLL3MBTL1MAPK1TDP1
SCHEMBL1373567 0.81 DHFR (0.49) DHFRMGLL
SCHEMBL2779445 0.81 DHFR (0.48) DHFRMGLLL3MBTL1MAPK1
SCHEMBL3679659 0.79 TSHR (0.53) L3MBTL1MAPK1
SCHEMBL31530692 0.78 DHFR (0.59) DHFRMGLLL3MBTL1MAPK1TDP1
SCHEMBL20239041 0.78 DHFR (0.55) DHFRMGLLL3MBTL1MAPK1
SCHEMBL1715144 0.78 DHFR (0.59) DHFRMGLLL3MBTL1MAPK1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2085823-B1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE NISSAN CHEMICAL IND LTD (JP) 2013-01-16 EP disclosed
EP-1876495-B1 COMPOSITION COMPRISING POLYMER HAVING ETHYLENE-DICARBONYL STRUCTURE FOR USE IN FORMING ANTI-REFLECTIVE COATING FOR LITHOGRAPHY NISSAN CHEMICAL IND LTD (JP) 2011-07-20 EP disclosed
US-7842620-B2 Method for manufacturing semiconductor device using quadruple-layer laminate NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-11-30 US disclosed
US-20100022089-A1 Method for manufacturing semiconductor device using quadruple-layer laminate NISSIAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-01-28 US disclosed
US-7632626-B2 a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-12-15 US disclosed
EP-2085823-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE Nissan Chemical Industries, Ltd. (JP) 2009-08-05 EP disclosed
US-20080268379-A1 a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2008-10-30 US disclosed
EP-1876495-A1 COMPOSITION COMPRISING POLYMER HAVING ETHYLENE-DICARBONYL STRUCTURE FOR USE IN FORMING ANTI-REFLECTIVE COATING FOR LITHOGRAPHY Nissan Chemical Industries, Ltd. (JP) 2008-01-09 EP disclosed