Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.46 |
| ▸ | TP53 | P04637 | 1/20 | 0.46 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.46 |
| ▸ | MGLL | Q99685 | 5/20 | 0.40 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.38 |
| ▸ | DHFR | P00374 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28839427 | 0.96 | ALDH1A1 (0.43) | ALDH1A1TP53CYP3A4MGLLL3MBTL1 | |
| SCHEMBL31087240 | 0.94 | ALDH1A1 (0.44) | ALDH1A1TP53CYP3A4MGLLL3MBTL1 | |
| SCHEMBL1714989 | 0.94 | ALDH1A1 (0.44) | ALDH1A1TP53CYP3A4MGLLL3MBTL1 | |
| SCHEMBL27688965 | 0.88 | MGLL (0.41) | ALDH1A1TP53CYP3A4MGLLL3MBTL1 | |
| SCHEMBL25314656 | 0.81 | ALDH1A1 (0.46) | ALDH1A1TP53CYP3A4MGLLL3MBTL1 | |
| SCHEMBL1714534 | 0.81 | ALDH1A1 (0.46) | ALDH1A1TP53CYP3A4MGLLL3MBTL1 | |
| SCHEMBL1715943 | 0.81 | ALDH1A1 (0.46) | ALDH1A1TP53CYP3A4MGLLL3MBTL1 | |
| SCHEMBL9615793 | 0.81 | ALDH1A1 (0.46) | ALDH1A1TP53CYP3A4MGLLL3MBTL1 | |
| SCHEMBL25285163 | 0.81 | ALDH1A1 (0.46) | ALDH1A1TP53CYP3A4MGLLL3MBTL1 | |
| SCHEMBL5704284 | 0.79 | ALDH1A1 (0.44) | ALDH1A1TP53CYP3A4MGLLL3MBTL1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-122095316-A | Composition for forming resist underlayer film | — | 2026-05-26 | — | — | CN | disclosed |
| WO-2025095106-A1 | RESIST UNDERLAYER FILM FORMATION COMPOSITION | 日産化学株式会社 | 2025-05-08 | — | — | WO | disclosed |
| CN-114746468-B | Method for producing polymer | 日产化学株式会社 | 2024-09-13 | — | — | CN | disclosed |
| US-20230103242-A1 | METHOD FOR PRODUCING POLYMER | NISSAN CHEMICAL CORPORATION (JP) | 2023-03-30 | — | — | US | disclosed |
| US-20230029997-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | NISSAN CHEMICAL CORPORATION (JP) | 2023-02-02 | — | — | US | disclosed |
| CN-114746468-A | Method for producing polymer | 日产化学株式会社 | 2022-07-12 | — | — | CN | disclosed |
| US-9240327-B2 | Resist underlayer film-forming composition for EUV lithography containing condensation polymer | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2016-01-19 | — | — | US | disclosed |
| US-20140170567-A1 | RESIST UNDERLAYER FILM-FORMING COMPOSITION FOR EUV LITHOGRAPHY CONTAINING CONDENSATION POLYMER | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2014-06-19 | — | — | US | disclosed |
| EP-1757986-B1 | ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER AND METHOD FOR FORMING PHOTORESIST PATTERN | NISSAN CHEMICAL IND LTD (JP) | 2014-05-14 | — | — | EP | disclosed |
| EP-2085823-B1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE | NISSAN CHEMICAL IND LTD (JP) | 2013-01-16 | — | — | EP | disclosed |
| US-7790356-B2 | Condensation type polymer-containing anti-reflective coating for semiconductor | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2010-09-07 | — | — | US | disclosed |
| US-20100022089-A1 | Method for manufacturing semiconductor device using quadruple-layer laminate | NISSIAN CHEMICAL INDUSTRIES, LTD. (JP) | 2010-01-28 | — | — | US | disclosed |
| US-7632626-B2 | a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2009-12-15 | — | — | US | disclosed |
| US-7595144-B2 | Sulfonate-containing anti-reflective coating forming composition for lithography | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2009-09-29 | — | — | US | disclosed |
| EP-2085823-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE | Nissan Chemical Industries, Ltd. (JP) | 2009-08-05 | — | — | EP | disclosed |
| US-20080268379-A1 | a polyester copolymer of fumaric acid and a diglycidyl ether with backbone of groups selected from substituted or unsubstituted alkylene, phenylene, napthylene, anthrylene, phthalic acid, triazinetrione etc. 1,3,4,6-tetrakis(methtoxymethyl)glycoluril crosslinker, a sulfonium or iodonium acid generator | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2008-10-30 | — | — | US | disclosed |
| US-20080038678-A1 | Condensation Type Polymer-Containing Anti-Reflective Coating For Semiconductor | NISSAN CHEMICAL INDUSTRIES LTD. (JP) | 2008-02-14 | — | — | US | disclosed |
| EP-1876495-A1 | COMPOSITION COMPRISING POLYMER HAVING ETHYLENE-DICARBONYL STRUCTURE FOR USE IN FORMING ANTI-REFLECTIVE COATING FOR LITHOGRAPHY | Nissan Chemical Industries, Ltd. (JP) | 2008-01-09 | — | — | EP | disclosed |
| EP-1813987-A1 | SULFONIC-ESTER-CONTAINING COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM FOR LITHOGRAPHY | Nissan Chemical Industries, Ltd. (JP) | 2007-08-01 | — | — | EP | disclosed |
| EP-1757986-A1 | ANTIREFLECTION FILM FOR SEMICONDUCTOR CONTAINING CONDENSATION TYPE POLYMER | Nissan Chemical Industries, Ltd. (JP) | 2007-02-28 | — | — | EP | disclosed |