SCHEMBL171600

SCHEMBL171600

C=C(C)C(=O)OCC(=O)OC(CC)(CC)C1CCCCC1

nearest known ligand 0.39

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.36
THRB P10828 1/20 0.34
TSHR P16473 3/20 0.33
EPHX1 P07099 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12332045 0.85 ALDH1A1 (0.31) ALDH1A1
SCHEMBL171954 0.85 ALDH1A1 (0.34) ALDH1A1THRBTSHREPHX1
SCHEMBL2735092 0.84 TSHR (0.42) ALDH1A1THRBTSHREPHX1
SCHEMBL22201018 0.84 ALDH1A1 (0.35) ALDH1A1THRBTSHREPHX1
SCHEMBL13398471 0.83 ALDH1A1 (0.37) ALDH1A1THRBTSHREPHX1
SCHEMBL2735073 0.83 ALDH1A1 (0.37) ALDH1A1THRBTSHREPHX1
SCHEMBL13398256 0.81 ALDH1A1 (0.38) ALDH1A1THRBTSHREPHX1
SCHEMBL16807392 0.81 ALDH1A1 (0.35) ALDH1A1THRBTSHR
SCHEMBL5426220 0.80 EPHX2 (0.38) ALDH1A1THRBEPHX1
SCHEMBL16596832 0.80 CHRM2 (0.33)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9051403-B2 Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition FUJIFILM CORPORATION (JP) 2015-06-09 US disclosed
US-9051403-B2 Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition FUJIFILM CORPORATION (JP) 2015-06-09 US disclosed
US-8507174-B2 Positive resist composition, pattern forming method using the composition, and compound for use in the composition FUJIFILM CORPORATION (JP) 2013-08-13 US disclosed
US-8507174-B2 Positive resist composition, pattern forming method using the composition, and compound for use in the composition FUJIFILM CORPORATION (JP) 2013-08-13 US disclosed
US-8507172-B2 Positive resist composition and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2013-08-13 US disclosed
US-8507172-B2 Positive resist composition and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2013-08-13 US disclosed
EP-2426154-A1 Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition Fujifilm Corporation (JP) 2012-03-07 EP disclosed
US-8088550-B2 Positive resist composition and pattern forming method FUJIFILM CORPORATION (JP) 2012-01-03 US disclosed
US-8088550-B2 Positive resist composition and pattern forming method FUJIFILM CORPORATION (JP) 2012-01-03 US disclosed
US-20110183258-A1 POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-07-28 US disclosed
US-20100233617-A1 PHOTOSENSITIVE COMPOSITION, PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION AND COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-16 US disclosed
US-20100233617-A1 PHOTOSENSITIVE COMPOSITION, PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION AND COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-16 US disclosed
EP-2177506-A1 POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND USED IN THE COMPOSITION Fujifilm Corporation (JP) 2010-04-21 EP disclosed
US-20100040975-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2010-02-18 US disclosed
US-20100040975-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2010-02-18 US disclosed
US-20090035692-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD FUJIFILM CORPORATION (JP) 2009-02-05 US disclosed
US-20090035692-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD FUJIFILM CORPORATION (JP) 2009-02-05 US disclosed
EP-2020615-A1 Positive resist composition and pattern forming method FUJIFILM Corporation (JP) 2009-02-04 EP disclosed
US-20090023096-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2009-01-22 US disclosed
US-20090023096-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2009-01-22 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100233617-A1 PHOTOSENSITIVE COMPOSITION, PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION AND COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION ZYX, CD79B, TERB1 ALDH1A1 4248/4885THRB 2505/4885TSHR 1454/4885
US-20110183258-A1 POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION CROCC, ACTR2, MRE11 ALDH1A1 4832/4885THRB 3569/4885TSHR 2667/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.