SCHEMBL1719704

SCHEMBL1719704

OCNCCNCCNCO

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.38
TDP1 Q9NUW8 2/20 0.38
CA12 O43570 2/20 0.38
CA6 P23280 2/20 0.38
CA7 P43166 2/20 0.38
CA9 Q16790 2/20 0.38
CA14 Q9ULX7 2/20 0.38
CA5B Q9Y2D0 2/20 0.38
CA1 P00915 1/20 0.38
CA2 P00918 1/20 0.38
CA3 P07451 1/20 0.38
ALOX15 P16050 1/20 0.38
CA4 P22748 1/20 0.38
CA5A P35218 1/20 0.38
ALDH1A1 P00352 1/20 0.38
TP53 P04637 1/20 0.38
KDM4E B2RXH2 1/20 0.35
CASP2 P42575 1/20 0.33
MEN1 O00255 1/20 0.31
RECQL P46063 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1398359 0.95
SCHEMBL11330423 0.89
SCHEMBL10885036 0.83 CA12 (0.69) LMNATDP1CA12CA6CA7
SCHEMBL2058092 0.83 CA12 (0.69) LMNATDP1CA12CA6CA7
SCHEMBL1627711 0.83
Hydrochloric Acid SCHEMBL2436614 0.80 KDM4E (0.71) LMNATDP1CA12CA6CA7
SCHEMBL1720393 0.78
SCHEMBL410349 0.78
SCHEMBL1720385 0.78 CYP1A2 (0.39) LMNACA12CA6CA7CA9
SCHEMBL14363062 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1031884-B1 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL CO (JP) 2012-01-11 EP claimed
US-7968507-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US claimed
US-20090084406-A1 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. 2009-04-02 US claimed
US-6638694-B2 Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) 2003-10-28 US claimed
US-20030186175-A1 RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME IKEMOTO KAZUTO (JP) 2003-10-02 US claimed
EP-1031884-A2 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2000-08-30 EP claimed
US-8163095-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-04-24 US disclosed
EP-1031884-B1 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL CO (JP) 2012-01-11 EP disclosed
US-20110206829-A1 COMPOSITION FOR STRIPPING AND STRIPPING METHOD SAMSUNG DISPLAY CO., LTD. (KR) 2011-08-25 US disclosed
US-7968507-B2 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-06-28 US disclosed
US-20090084406-A1 Composition for stripping and stripping method SAMSUNG ELECTRONICS CO., LTD. 2009-04-02 US disclosed
US-7078371-B2 For cleaning a substrate of semiconductor integrated circuits or liquid crystal display devices MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2006-07-18 US disclosed
US-20040048761-A1 Cleaning composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2004-03-11 US disclosed
US-6638694-B2 Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) 2003-10-28 US disclosed
US-20030186175-A1 RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME IKEMOTO KAZUTO (JP) 2003-10-02 US disclosed
EP-1031884-A2 Resist stripping agent and process of producing semiconductor devices using the same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2000-08-30 EP disclosed